IGBT Transistors 600V Fast 1-8kHz
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations
Maximum Continuous Collector Current = 31 A
Maximum Collector Emitter Voltage = 600 V
Maximum Gate Emitter Voltage = ±20V
Package Type = TO-247AC
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Transistor Configuration = Single
Length = 15.9mm
Width = 5.3mm
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations
Maximum Continuous Collector Current = 31 A
Maximum Collector Emitter Voltage = 600 V
Maximum Gate Emitter Voltage = ±20V
Package Type = TO-247AC
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Transistor Configuration = Single
Length = 15.9mm
Width = 5.3mm
Delivery on production packaging - Tube. This product is non-returnable.
Manufacturer: Infineon Technologies
Win Source Part Number: 205427-IRG4PC30FDPBF
Packaging: Bulk
Mounting: Through Hole
Reverse Recovery Time (trr): 42ns
Input Type: Standard
Gate Charge: 51nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AC
Maximum Current Collector: 31A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 100W
Pulsed Collector Current: 120A
Collector-emitter saturation voltage(Max): 1.8V @ 15V, 17A
Total Switching Energy(Ets): 630μJ (on), 1.39mJ (off)
Turn-on and Turn-off delay time: 42ns/230ns
Testing Conditions: 480V, 17A, 23 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited
IRG4PC30 - Discrete IGBT with Anti-Parallel Diode
IGBT 600V 31A 100W Through Hole TO-247AC
IGBT 600V 31A 100W TO247AC
600V FAST 1-8 KHZ COPACK IGBT IN A TO-247AC PACKAGE
SINGLE IGBT, 600V, 31A; Continuous Collector Current:31A; Power Dissipation:100W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:IRG4 Series; MSL:- RoHS Compliant: Yes
VAST STOCK CO., LIMITED | RS Components, Ltd. | Win Source Electronics | Rochester Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Allied Electronics, Inc. | Newark, An Avnet Company | |
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Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
Product Number | IRG4PC30FDPBF | 5430210 | 205427-IRG4PC30FDPBF | IRG4PC30FDPBF | IRG4PC30FDPBF-ND | IRG4PC30FDPBF | 70018452 | 63J7507 |
Product Name | IGBT Transistors | IGBTs - Single - IRG4PC30FDPBF | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | 600V FAST 1-8 KHZ COPACK IGBT IN A TO-247AC PACKAGE | Single Igbt, 600V, 31A; Continuous Collector Current Infineon | ||
Polarity | N-Channel | |||||||
IC(max) | 31 amps | |||||||
Package Type | TO-247; TO-247AC | TO-247; SOT3; TO-247AC | TO-247; TO-247COPAK | TO-247; TO-247-3 | TO-3 | |||
VCE(on) | 1.8 volts |