Infineon Technologies AG IGBT Transistors IRG4PC30FDPBF

Description
IGBT Transistors 600V Fast 1-8kHz
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Company
Product
Description
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Sheung Wan, Hong Kong
IGBT Transistors
IRG4PC30FDPBF
IGBT Transistors IRG4PC30FDPBF
IGBT Transistors 600V Fast 1-8kHz

IGBT Transistors 600V Fast 1-8kHz

Supplier's Site Datasheet
 - 5430210 - RS Components, Ltd.
Corby, Northants, United Kingdom
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses. IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations Maximum Continuous Collector Current = 31 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = ±20V Package Type = TO-247AC Mounting Type = Through Hole Channel Type = N Pin Count = 3 Transistor Configuration = Single Length = 15.9mm Width = 5.3mm

Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations
Maximum Continuous Collector Current = 31 A
Maximum Collector Emitter Voltage = 600 V
Maximum Gate Emitter Voltage = ±20V
Package Type = TO-247AC
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Transistor Configuration = Single
Length = 15.9mm
Width = 5.3mm

Supplier's Site
 - 5430210P - RS Components, Ltd.
Corby, Northants, United Kingdom
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses. IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations Maximum Continuous Collector Current = 31 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = ±20V Package Type = TO-247AC Mounting Type = Through Hole Channel Type = N Pin Count = 3 Transistor Configuration = Single Length = 15.9mm Width = 5.3mm Delivery on production packaging - Tube. This product is non-returnable.

Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations
Maximum Continuous Collector Current = 31 A
Maximum Collector Emitter Voltage = 600 V
Maximum Gate Emitter Voltage = ±20V
Package Type = TO-247AC
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Transistor Configuration = Single
Length = 15.9mm
Width = 5.3mm
Delivery on production packaging - Tube. This product is non-returnable.

Supplier's Site
IGBTs - Single - IRG4PC30FDPBF - 205427-IRG4PC30FDPBF - Win Source Electronics
Yishun, Singapore
IGBTs - Single - IRG4PC30FDPBF
205427-IRG4PC30FDPBF
IGBTs - Single - IRG4PC30FDPBF 205427-IRG4PC30FDPBF
Manufacturer: Infineon Technologies Win Source Part Number: 205427-IRG4PC30FDPBF Packaging: Bulk Mounting: Through Hole Reverse Recovery Time (trr): 42ns Input Type: Standard Gate Charge: 51nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AC Maximum Current Collector: 31A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 100W Pulsed Collector Current: 120A Collector-emitter saturation voltage(Max): 1.8V @ 15V, 17A Total Switching Energy(Ets): 630μJ (on), 1.39mJ (off) Turn-on and Turn-off delay time: 42ns/230ns Testing Conditions: 480V, 17A, 23 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 205427-IRG4PC30FDPBF
Packaging: Bulk
Mounting: Through Hole
Reverse Recovery Time (trr): 42ns
Input Type: Standard
Gate Charge: 51nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AC
Maximum Current Collector: 31A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 100W
Pulsed Collector Current: 120A
Collector-emitter saturation voltage(Max): 1.8V @ 15V, 17A
Total Switching Energy(Ets): 630μJ (on), 1.39mJ (off)
Turn-on and Turn-off delay time: 42ns/230ns
Testing Conditions: 480V, 17A, 23 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited

Supplier's Site Datasheet
 - IRG4PC30FDPBF - Rochester Electronics
Newburyport, MA, United States
IRG4PC30 - Discrete IGBT with Anti-Parallel Diode

IRG4PC30 - Discrete IGBT with Anti-Parallel Diode

Supplier's Site Datasheet
Single IGBTs - IRG4PC30FDPBF-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
IRG4PC30FDPBF-ND
Single IGBTs IRG4PC30FDPBF-ND
IGBT 600V 31A 100W Through Hole TO-247AC

IGBT 600V 31A 100W Through Hole TO-247AC

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - IRG4PC30FDPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
IRG4PC30FDPBF
Discrete Semiconductor Products - Transistors - IGBTs IRG4PC30FDPBF
IGBT 600V 31A 100W TO247AC

IGBT 600V 31A 100W TO247AC

Supplier's Site
600V FAST 1-8 KHZ COPACK IGBT IN A TO-247AC PACKAGE - 70018452 - Allied Electronics, Inc.
Fort Worth, TX, USA
600V FAST 1-8 KHZ COPACK IGBT IN A TO-247AC PACKAGE
70018452
600V FAST 1-8 KHZ COPACK IGBT IN A TO-247AC PACKAGE 70018452
600V FAST 1-8 KHZ COPACK IGBT IN A TO-247AC PACKAGE

600V FAST 1-8 KHZ COPACK IGBT IN A TO-247AC PACKAGE

Supplier's Site
Single Igbt, 600V, 31A; Continuous Collector Current Infineon - 63J7507 - Newark, An Avnet Company
Chicago, IL, United States
Single Igbt, 600V, 31A; Continuous Collector Current Infineon
63J7507
Single Igbt, 600V, 31A; Continuous Collector Current Infineon 63J7507
SINGLE IGBT, 600V, 31A; Continuous Collector Current:31A; Power Dissipation:100W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:IRG4 Series; MSL:- RoHS Compliant: Yes

SINGLE IGBT, 600V, 31A; Continuous Collector Current:31A; Power Dissipation:100W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:IRG4 Series; MSL:- RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  VAST STOCK CO., LIMITED RS Components, Ltd. Win Source Electronics Rochester Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Allied Electronics, Inc. Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IRG4PC30FDPBF 5430210 205427-IRG4PC30FDPBF IRG4PC30FDPBF IRG4PC30FDPBF-ND IRG4PC30FDPBF 70018452 63J7507
Product Name IGBT Transistors IGBTs - Single - IRG4PC30FDPBF Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs 600V FAST 1-8 KHZ COPACK IGBT IN A TO-247AC PACKAGE Single Igbt, 600V, 31A; Continuous Collector Current Infineon
Polarity N-Channel
IC(max) 31 amps
Package Type TO-247; TO-247AC TO-247; SOT3; TO-247AC TO-247; TO-247COPAK TO-247; TO-247-3 TO-3
VCE(on) 1.8 volts
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