Manufacturer: Infineon Technologies
Win Source Part Number: 138324-IRG4IBC30WPBF
Packaging: Tube/Rail
Mounting: Through Hole
Input Type: Standard
Gate Charge: 51nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB Full-Pak
Maximum Current Collector: 17A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 45W
Pulsed Collector Current: 92A
Collector-emitter saturation voltage(Max): 2.7V @ 15V, 12A
Total Switching Energy(Ets): 130μJ (on), 130μJ (off)
Turn-on and Turn-off delay time: 25ns/99ns
Testing Conditions: 480V, 12A, 23 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited
COPACK IGBT W/ULTRAFAST SOFT REC
IGBT 600V 17A 45W Through Hole TO-220AB Full-Pak
IGBT 600V 17A 45W TO220FP Product overview: IRG4IBC30WPBF from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 17A, 45W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 17A, 45W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IRG4IBC30WPBF can be used for catalog matching and distributor lookup.
IGBT 600V 17A 45W TO220FP
IGBT Transistors 600V Warp 60-150kHz
IGBT 600V 17A 45W TO220FP
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 138324-IRG4IBC30WPBF | IRG4IBC30WPBF | IRG4IBC30WPBF-ND | 279-IRG4IBC30WPBF | IRG4IBC30WPBF | IRG4IBC30WPBF | 376-IRG4IBC30WPBF |
| Product Name | IGBTs - Single - IRG4IBC30WPBF | Single IGBTs | Single IGBTs | 600V 17A 45W IGBT Transistor | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors | IGBT 600V 17A 45W TO220FP |
| VCE(on) | 2.7 volts | 2.1 volts | |||||
| PD | 45000 milliwatts | 45000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |
| Package Type | TO-220; SOT3; TO-220AB Full-Pak | TO-220; TO-220-3 Full Pack | TO-220; TO-220-3 Full Pack | Tube | |||
| Packing Method | Rail; Tube; Tube/Rail | Tube | Tube | Tube; Tube | Tube; Tube |
