Infineon Technologies AG IGBTs - Single - IRG7PK35UD1PBF IRG7PK35UD1PBF

Manufacturer: Infineon Technologies
Win Source Part Number: 1188332-IRG7PK35UD1PBF
Packaging: Tube
Mounting Style: Through Hole
Current - Collector Pulsed (Icm): 200A
Switching Energy: 650μJ (off)
Input Type: Standard
Gate Charge: 98nC
Test Condition: 600V, 20A, 10Ohm, 15V
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247AC
Status: Obsolete
Temperature Range - Operating: -40°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-247-3
Current - Collector (Ic) (Maximum): 40A
Voltage - Collector Emitter Breakdown (Maximum): 1400V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 25
MSL Level: 1 (Unlimited)
Maximum Power: 167W
Vce(on) (Maximum) at Vge, Ic: 2.35V at 15V, 20A
Td (on/off) at 25°C: -/150ns

IRG7PK35 - Discrete IGBT with Anti-Parallel Diode

Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations
Maximum Continuous Collector Current = 40 A
Maximum Collector Emitter Voltage = 1400 V
Maximum Gate Emitter Voltage = ±30V
Maximum Power Dissipation = 167 W
Package Type = TO-247AC
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Switching Speed = 1MHz
Transistor Configuration = Single
Delivery on production packaging - Tube. This product is non-returnable.

Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations
Maximum Continuous Collector Current = 40 A
Maximum Collector Emitter Voltage = 1400 V
Maximum Gate Emitter Voltage = ±30V
Maximum Power Dissipation = 167 W
Package Type = TO-247AC
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Switching Speed = 1MHz
Transistor Configuration = Single

IGBT 1400V 40A 167W Through Hole TO-247AC

IGBT 1400V 40A 167W TO247AC