IGBT 600V 8.5A 38W Surface Mount D-Pak
Manufacturer: Infineon Technologies
Win Source Part Number: 040776-IRG4RC10UDPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Reverse Recovery Time (trr): 28ns
Input Type: Standard
Gate Charge: 15nC
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Maximum Current Collector: 8.5A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 38W
Pulsed Collector Current: 34A
Collector-emitter saturation voltage(Max): 2.6V @ 15V, 5A
Total Switching Energy(Ets): 140μJ (on), 120μJ (off)
Turn-on and Turn-off delay time: 40ns/87ns
Testing Conditions: 480V, 5A, 100 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited
IGBT 600V 8.5A 38W DPAK Product overview: IRG4RC10UDPBF from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 8.5A, 38W, DPAK. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 8.5A, 38W, DPAK. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IRG4RC10UDPBF can be used for catalog matching and distributor lookup.
Discrete IGBT with Anti-Parallel Diode
Discrete IGBT with Anti-Parallel Diode
IGBT 600V 8.5A 38W DPAK
IGBT 600V 8.5A 38W DPAK
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Rochester Electronics | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IRG4RC10UDPBF-ND | 040776-IRG4RC10UDPBF | 279-IRG4RC10UDPBF | IRG4RC10UDPBF | 376-IRG4RC10UDPBF | IRG4RC10UDPBF |
| Product Name | Single IGBTs | IGBTs - Single - IRG4RC10UDPBF | 600V 8.5A 38W DPAK IGBT Transistor | IGBT 600V 8.5A 38W DPAK | Discrete Semiconductor Products - Transistors - IGBTs | |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | SOT3; D-Pak | Tube | D2PAK | ||
| Packing Method | Tube | Rail; Tube; Tube/Rail | Tube | Tube; Tube | Tube; Tube | Tube; Tube |
| VCE(on) | 2.6 volts | 2.6 volts | ||||
| PD | 38000 milliwatts | 38000 milliwatts |
