Manufacturer: Infineon Technologies
Win Source Part Number: 1188345-IRGB8B60KPBF
Packaging: Tube
Mounting Style: Through Hole
IGBT Type: NPT
Current - Collector Pulsed (Icm): 26A
Switching Energy: 160μJ (on), 160μJ (off)
Input Type: Standard
Gate Charge: 18.2nC
Test Condition: 400V, 5A, 100Ohm, 15V
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220AB
Status: Obsolete
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-220-3
Current - Collector (Ic) (Maximum): 28A
Voltage - Collector Emitter Breakdown (Maximum): 600V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Maximum Power: 167W
Vce(on) (Maximum) at Vge, Ic: 2.2V at 15V, 8A
Td (on/off) at 25°C: 23ns/140ns
IGBT 600V 28A 167W TO220AB Product overview: IRGB8B60KPBF from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 28A, 167W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 28A, 167W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IRGB8B60KPBF can be used for catalog matching and distributor lookup.
IGBT NPT 600V 28A 167W Through Hole TO-220AB
IGBT 600V 28A 167W TO220AB
IGBT 600V 28A 167W TO220AB
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 1188345-IRGB8B60KPBF | 279-IRGB8B60KPBF | IRGB8B60KPBF-ND | IRGB8B60KPBF | 376-IRGB8B60KPBF |
| Product Name | IGBTs - Single - IRGB8B60KPBF | 600V 28A 167W IGBT Transistor | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | IGBT 600V 28A 167W TO220AB |
| VCES | 600 volts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |
| Package Type | TO-220; SOT3 | Tube | TO-220; TO-220-3 | ||
| Packing Method | Tube; Tube | Tube | Tube | Tube; Tube | Tube; Tube |
| Structure | NPT |