IGBT 600V 23A 100W TO247AC Product overview: IRG4PC30UDPBF from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 23A, 100W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 23A, 100W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IRG4PC30UDPBF can be used for catalog matching and distributor lookup.
IGBT 600V 23A 100W Through Hole TO-247AC
IGBT 600V 23A 100W TO247AC
Manufacturer: Infineon Technologies
Win Source Part Number: 205428-IRG4PC30UDPBF
Packaging: Bulk
Mounting: Through Hole
Reverse Recovery Time (trr): 42ns
Input Type: Standard
Gate Charge: 50nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AC
Maximum Current Collector: 23A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 100W
Pulsed Collector Current: 92A
Collector-emitter saturation voltage(Max): 2.1V @ 15V, 12A
Total Switching Energy(Ets): 380μJ (on), 160μJ (off)
Turn-on and Turn-off delay time: 40ns/91ns
Testing Conditions: 480V, 12A, 23 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited
SINGLE IGBT, 600V, 23A, TO-247AC, DC COLLECTOR CURRENT:23A, COLLECTOR EMITTER SATURATION VOLTAGE VCE(ON):2.52V, POWER DISSIPATION PD:100W, COLLECTOR EMITTER VOLTAGE V(BR)CEO:600V, NO. OF PINS:3PINS, OPERATING TEMPERATURE MAX:150/C ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
IGBT Transistors 600V ULTRAFAST 8-60 KHZ COPACK IGBT
IGBT 600V 23A 100W TO247AC
SINGLE IGBT, 600V, 23A, TO-247AC; Continuous Collector Current:23A; Collector Emitter Saturation Voltage:2.52V; Power Dissipation:100W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C; MSL:- RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Radwell International | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-IRG4PC30UDPBF | IRG4PC30UDPBF-ND | IRG4PC30UDPBF | 205428-IRG4PC30UDPBF | 66783751 | IRG4PC30UDPBF | IRG4PC30UDPBF | 63J7512 |
| Product Name | 600V 23A 100W IGBT Transistor | Single IGBTs | Single IGBTs | IGBTs - Single - IRG4PC30UDPBF | IGBT | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs | Single Igbt, 600V, 23A, To-247Ac; Continuous Collector Current Infineon |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ? to 150 C (? to 302 F) |
