Infineon Technologies AG IGBT Discretes IKY75N120CH3

1200 V, 75 A IGBT with anti-parallel diode in TO-247 PLUS package Hard-switching 1200 V, 75 A HighSpeed 3 H3 in TO-247 PLUS package with soft, fast recovery full current rated anti-parallel emitter controlled diode. Key features of the TO-247PLUS package are higher current capability, improved thermal behaviour and extended C-E creepage. The 4pin package configuration provides ultra-low inductance to the gate-emitter control loop with the 4pin package directly to the gate driver and allows for reduction the both of E on and E off losses amounting up to 20% lower total switching losses E ts Summary of Features Extremely low control inductance loop with extra emitter pin for driver feedback 20% reduction in total switching losses compared to 3pin package using same technology Up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint Benefits Highest efficiency with lowest switching losses 1200 V IGBT High power density 1200V discrete IGBT Lower thermal resistance R th(jh) and improved by ~15% heat dissipation capability of TO-247PLUS vs TO-247 Applications EV charging Photovoltaic Uninterruptible power supplies (UPS)