Infineon Technologies AG Single IGBTs IRG4IBC30FDPBF

Description
IGBT 600V 20.3A 45W Through Hole TO-220AB Full-Pak
Request a Quote Datasheet
Description
IGBT 600V 20.3A 45W Through Hole TO-220AB Full-Pak
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - IRG4IBC30FDPBF-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
IRG4IBC30FDPBF-ND
Single IGBTs IRG4IBC30FDPBF-ND
IGBT 600V 20.3A 45W Through Hole TO-220AB Full-Pak

IGBT 600V 20.3A 45W Through Hole TO-220AB Full-Pak

Buy Now Datasheet
IGBTs - Single - IRG4IBC30FDPBF - 040771-IRG4IBC30FDPBF - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IRG4IBC30FDPBF
040771-IRG4IBC30FDPBF
IGBTs - Single - IRG4IBC30FDPBF 040771-IRG4IBC30FDPBF
Manufacturer: Infineon Technologies Win Source Part Number: 040771-IRG4IBC30FDPB F Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 42ns Input Type: Standard Gate Charge: 51nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Full-Pak Maximum Current Collector: 20.3A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 45W Pulsed Collector Current: 120A Collector-emitter saturation voltage(Max): 1.8V @ 15V, 17A Total Switching Energy(Ets): 630μJ (on), 1.39mJ (off) Turn-on and Turn-off delay time: 42ns/230ns Testing Conditions: 480V, 17A, 23 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited Quantity per package: 50

Manufacturer: Infineon Technologies
Win Source Part Number: 040771-IRG4IBC30FDPBF
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 42ns
Input Type: Standard
Gate Charge: 51nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB Full-Pak
Maximum Current Collector: 20.3A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 45W
Pulsed Collector Current: 120A
Collector-emitter saturation voltage(Max): 1.8V @ 15V, 17A
Total Switching Energy(Ets): 630μJ (on), 1.39mJ (off)
Turn-on and Turn-off delay time: 42ns/230ns
Testing Conditions: 480V, 17A, 23 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited
Quantity per package: 50

Buy Now Datasheet
Single IGBTs - IRG4IBC30FDPBF - ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
IRG4IBC30FDPBF
Single IGBTs IRG4IBC30FDPBF
IGBT 600V 20.3A 45W TO220FP

IGBT 600V 20.3A 45W TO220FP

Supplier's Site Datasheet
IGBT - 17261153 - Radwell International
Willingboro, NJ, United States
DISCONTINUED BY MANUFACTURER, INSULATED GATE BIPOLAR TRANSISTOR, 20.3A I(C), 600V V(BR)CES, N-CHANNEL, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, INSULATED GATE BIPOLAR TRANSISTOR, 20.3A I(C), 600V V(BR)CES, N-CHANNEL, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - IGBTs - IRG4IBC30FDPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
IRG4IBC30FDPBF
Discrete Semiconductor Products - Transistors - IGBTs IRG4IBC30FDPBF
IGBT 600V 20.3A 45W TO220FP

IGBT 600V 20.3A 45W TO220FP

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Radwell International Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IRG4IBC30FDPBF-ND 040771-IRG4IBC30FDPBF IRG4IBC30FDPBF 17261153 IRG4IBC30FDPBF
Product Name Single IGBTs IGBTs - Single - IRG4IBC30FDPBF Single IGBTs IGBT Discrete Semiconductor Products - Transistors - IGBTs
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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