IGBT 600V 20.3A 45W TO220FP
IGBT 600V 20.3A 45W Through Hole TO-220AB Full-Pak
Manufacturer: Infineon Technologies
Win Source Part Number: 040771-IRG4IBC30FDPB
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 42ns
Input Type: Standard
Gate Charge: 51nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB Full-Pak
Maximum Current Collector: 20.3A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 45W
Pulsed Collector Current: 120A
Collector-emitter saturation voltage(Max): 1.8V @ 15V, 17A
Total Switching Energy(Ets): 630μJ (on), 1.39mJ (off)
Turn-on and Turn-off delay time: 42ns/230ns
Testing Conditions: 480V, 17A, 23 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited
Quantity per package: 50
IGBT 600V 20.3A 45W TO220FP Product overview: IRG4IBC30FDPBF from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 20.3A, 45W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 20.3A, 45W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IRG4IBC30FDPBF can be used for catalog matching and distributor lookup.
DISCONTINUED BY MANUFACTURER, INSULATED GATE BIPOLAR TRANSISTOR, 20.3A I(C), 600V V(BR)CES, N-CHANNEL, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
IGBT 600V 20.3A 45W TO220FP
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Radwell International | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IRG4IBC30FDPBF | IRG4IBC30FDPBF-ND | 040771-IRG4IBC30FDPBF | 279-IRG4IBC30FDPBF | 17261153 | IRG4IBC30FDPBF |
| Product Name | Single IGBTs | Single IGBTs | IGBTs - Single - IRG4IBC30FDPBF | 600V 20.3A 45W IGBT Transistor | IGBT | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
