Manufacturer: Infineon Technologies
Win Source Part Number: 069660-IRG6IC30UPBF
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: Trench
Input Type: Standard
Gate Charge: 79nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: TO-220AB Full-Pak
Maximum Current Collector: 25A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 37W
Collector-emitter saturation voltage(Max): 2.88V @ 15V, 120A
Turn-on and Turn-off delay time: 20ns/160ns
Testing Conditions: 400V, 25A, 10 Ohm
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance
IGBT 600V 25A 37W TO220ABFP Product overview: IRG6IC30UPBF from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 25A, 37W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 25A, 37W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IRG6IC30UPBF can be used for catalog matching and distributor lookup.
IGBT Trench 600V 25A 37W Through Hole TO-220AB Full-Pak
IGBT 600V 25A 37W TO220ABFP
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 069660-IRG6IC30UPBF | 279-IRG6IC30UPBF | IRG6IC30UPBF-ND | IRG6IC30UPBF |
| Product Name | IGBTs - Single - IRG6IC30UPBF | 600V 25A 37W IGBT Transistor | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs |
| VCE(on) | 2.88 volts | |||
| PD | 37000 milliwatts | 37 milliwatts | ||
| TJ | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) |