IGBT Trench 1200V 30A 115W Through Hole TO-247AC
Win Source Part Number: 1214499-IRG7PH28UD1P
Category: Discrete Semiconductor Products>Transistors
Package: Bulk
Standard Package: 1
Power - Max: 115 W
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 30 A
Current - Collector Pulsed (Icm): 100 A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
Switching Energy: 543µJ (off)
Input Type: Standard
Gate Charge: 90 nC
Td (on/off) @ 25°C: -/229ns
Test Condition: 600V, 15A, 22Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 67 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 0000.00.0000
Mfr: International Rectifier
Other Names: INFIRFIRG7PH28UD1PBF
INSULATED GATE BIPOLAR GATE TRAS
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IRG7PH28UD1PBF-ND | 1214499-IRG7PH28UD1PBF | IRG7PH28UD1PBF |
| Product Name | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs - Single | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
