IGBT, 40A I(C), 600V V(BR)CES, N
IRGB20B60 - DISCRETE IGBT WITH A
IGBT NPT 600V 40A 215W Through Hole TO-220AB
IGBT 600V 40A 215W TO220AB Product overview: IRGB20B60PD1PBF from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 40A, 215W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 40A, 215W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IRGB20B60PD1PBF can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 205440-IRGB20B60PD1P
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 28ns
IGBT Type: NPT
Input Type: Standard
Gate Charge: 68nC
Family Name: IRGB20B60PD1
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Maximum Current Collector: 40A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 215W
Pulsed Collector Current: 80A
Collector-emitter saturation voltage(Max): 2.8V @ 15V, 20A
Total Switching Energy(Ets): 95μJ (on), 100μJ (off)
Turn-on and Turn-off delay time: 20ns/115ns
Testing Conditions: 390V, 13A, 10 Ohm, 15V
Alternative Parts (Cross-Reference): HGTP20N60C3R ; STGP19NC60H; STGP20NB60H; SGP40N60UF;
Introduction Date: August 02, 2004
ECCN: EAR99
Country of Origin: Mexico, Republic of Korea
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited
IGBT 600V 40A 215W TO220AB
IGBT Transistors 600V Warp2 150kHz
IGBT with Ultrafast Soft Recovery Diode, 600 V, 13 A, TO-220AB
SINGLE IGBT, 600V, 40A; Continuous Collector Current:40A; Power Dissipation:215W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:- RoHS Compliant: Yes
| ODG (Origin Data Global) | ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Allied Electronics, Inc. | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IRGB20B60PD1PBF | IRGB20B60PD1PBF | IRGB20B60PD1PBF-ND | 279-IRGB20B60PD1PBF | 205440-IRGB20B60PD1PBF | IRGB20B60PD1PBF | IRGB20B60PD1PBF | 70017558 | 63J7440 |
| Product Name | Single IGBTs | Single IGBTs | Single IGBTs | 600V 40A 215W IGBT Transistor | IGBTs - Single - IRGB20B60PD1PBF | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors | IGBT with Ultrafast Soft Recovery Diode, 600 V, 13 A, TO-220AB | Single Igbt, 600V, 40A; Continuous Collector Current Infineon |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ? to 150 C (? to 302 F) | ||||
| Package Type | TO-220; TO-220-3 | TO-220; TO-220-3 | Tube | TO-220; SOT3; TO-220AB | TO-220 | TO-3 | |||
| Packing Method | Tube | Tube | Rail; Tube; Tube/Rail | Tube; Tube | |||||
| Structure | NPT |
