Infineon Technologies AG Discrete Semiconductor Products - Transistors - IGBTs IRG8P50N120KD-EPBF

IGBT 1200V 80A TO247AD

IGBT 1200V 80A 350W Through Hole TO-247AD

Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations
Maximum Continuous Collector Current = 80 A
Maximum Collector Emitter Voltage = 1200 V
Maximum Gate Emitter Voltage = ±30V
Maximum Power Dissipation = 350 W
Package Type = TO-247AD
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Switching Speed = 1MHz
Transistor Configuration = Single
Delivery on production packaging - Tube. This product is non-returnable.

Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations
Maximum Continuous Collector Current = 80 A
Maximum Collector Emitter Voltage = 1200 V
Maximum Gate Emitter Voltage = ±30V
Maximum Power Dissipation = 350 W
Package Type = TO-247AD
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Switching Speed = 1MHz
Transistor Configuration = Single

IRG8P50N120 - Discrete IGBT with Anti-Parallel Diode

IRG8P50N120 - Discrete IGBT with Anti-Parallel Diode