Hard-switching 1200 V, 50 A TRENCHSTOP™ IGBT7 H7 discrete in TO-247 4pin package technology has been developed to fulfill the demand in applications focusing on decarbonization such as solar photovoltaic, uninterruptible power supplies and battery chargers.
Summary of Features
Excellent VCEsat behavior thanks to the famous Infineon TRENCHSTOP™ technology
Fast switching behavior with low EMI emissions
Optimized diode for target applications, resulting in low Qrr
Low gate resistor selection possible (down to 5 Ω) whilst maintaining excellent switching behavior
Offering Tj(max) of 175 °C
Benefits
Technology with the highest power density with up to 140 A rating
Optimized performance in application conditions
Lowest conduction losses
Lowest switching losses
Humidity robustness under harsh environment
Improved EMI performance
Kelvin emitter pin brings additional reduction of total switching losses compare to 3 pin
Applications
EV charging
Photovoltaic
Uninterruptible power supplies (UPS)
Hard-switching 1200 V, 50 A TRENCHSTOP™ IGBT7 H7 discrete in TO-247 4pin package technology has been developed to fulfill the demand in applications focusing on decarbonization such as solar photovoltaic, uninterruptible power supplies and battery chargers.
Summary of Features
- Excellent VCEsat behavior thanks to the famous Infineon TRENCHSTOP™ technology
- Fast switching behavior with low EMI emissions
- Optimized diode for target applications, resulting in low Qrr
- Low gate resistor selection possible (down to 5 Ω) whilst maintaining excellent switching behavior
- Offering Tj(max) of 175 °C
Benefits
- Technology with the highest power density with up to 140 A rating
- Optimized performance in application conditions
- Lowest conduction losses
- Lowest switching losses
- Humidity robustness under harsh environment
- Improved EMI performance
- Kelvin emitter pin brings additional reduction of total switching losses compare to 3 pin
Applications
- EV charging
- Photovoltaic
- Uninterruptible power supplies (UPS)
