IGBT 600V 23A 100W TO220AB
Manufacturer: Infineon Technologies
Win Source Part Number: 069634-IRG4BC30UDPBF
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 42ns
Input Type: Standard
Gate Charge: 50nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Maximum Current Collector: 23A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 100W
Pulsed Collector Current: 92A
Collector-emitter saturation voltage(Max): 2.1V @ 15V, 12A
Total Switching Energy(Ets): 380μJ (on), 160μJ (off)
Turn-on and Turn-off delay time: 40ns/91ns
Testing Conditions: 480V, 12A, 23 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance
IGBT 600V 23A 100W TO220AB Product overview: IRG4BC30UDPBF from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 23A, 100W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 23A, 100W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IRG4BC30UDPBF can be used for catalog matching and distributor lookup.
IGBT 600V 23A 100W Through Hole TO-220AB
DISCONTINUED BY MANUFACTURER, TRANSISTOR, SINGLE IGBT, 600V, 23A, DC COLLECTOR CURRENT 23A, COLLECTOR EMITTER SATURATION VOLTAGE VCE(ON) 2.52V, POWER DISSIPATION PD 100W, COLLECTOR EMITTER VOL. FREE 2 YEAR RADWELL WARRANTY
SINGLE IGBT, 600V, 23A, DC COLLECTOR CURRENT 23 AMP, COLLECTOR EMITTER SATURATION VOLTAGE VCE(ON):2.52V, POWER DISSIPATION PD:100W, COLLECTOR EMITTER VOLTAGE V(BR)CEO:600V, NO. OF PINS:3PINS, OPERATING TEMPERATURE MAX:150/C, MSL ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
IGBT Transistors 600V UltraFast 8-60kHz
IGBT 600V 23A 100W TO220AB
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Radwell International | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | RF Transistors | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IRG4BC30UDPBF | 069634-IRG4BC30UDPBF | 279-IRG4BC30UDPBF | IRG4BC30UDPBF-ND | 17407284 | IRG4BC30UDPBF | IRG4BC30UDPBF |
| Product Name | Single IGBTs | IGBTs - Single - IRG4BC30UDPBF | 600V 23A 100W IGBT Transistor | Single IGBTs | Transistor | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
