Hard-switching 650 V, 75 A TRENCHSTOP™ IGBT7 H7 discrete in TO247-4 package technology has been developed to fulfill the demand in green & efficient energy applications, while also offering significant improvements over its predecessor generations.
Summary of Features
Excellent VCE(sat) behavior thanks to our famous TRENCHSTOP™ technology
Very soft, fast recovery antiparallel diode
Offering Tj(max) of 175°C
Optimized for hard switching, two and three level topologies
Benefits
Technology with the high power density with up to 150 A rating
Optimized performance in application conditions
Lowest conduction losses
Lowest switching losses
Humidity robustness under harsh environment
Improved EMI performance
Applications
EV charging
Photovoltaic
Uninterruptible power supplies (UPS)
Hard-switching 650 V, 75 A TRENCHSTOP™ IGBT7 H7 discrete in TO247-4 package technology has been developed to fulfill the demand in green & efficient energy applications, while also offering significant improvements over its predecessor generations.
Summary of Features
- Excellent VCE(sat) behavior thanks to our famous TRENCHSTOP™ technology
- Very soft, fast recovery antiparallel diode
- Offering Tj(max) of 175°C
- Optimized for hard switching, two and three level topologies
Benefits
- Technology with the high power density with up to 150 A rating
- Optimized performance in application conditions
- Lowest conduction losses
- Lowest switching losses
- Humidity robustness under harsh environment
- Improved EMI performance
Applications
- EV charging
- Photovoltaic
- Uninterruptible power supplies (UPS)