Manufacturer: Infineon Technologies
Win Source Part Number: 110112-IRG4BC30FD-SP
Packaging: Tube/Rail
Mounting: SMD (SMT)
Reverse Recovery Time (trr): 42ns
Input Type: Standard
Gate Charge: 51nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Maximum Current Collector: 31A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 100W
Pulsed Collector Current: 124A
Collector-emitter saturation voltage(Max): 1.8V @ 15V, 17A
Total Switching Energy(Ets): 630μJ (on), 1.39mJ (off)
Turn-on and Turn-off delay time: 42ns/230ns
Testing Conditions: 480V, 17A, 23 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance
IGBT 600V 31A 100W Surface Mount D2PAK
IGBT Transistors 600V HYPERFAST 1-8 KHZ CO-PACK IGBT
IGBT Single Transistor, 31 A, 1.8 V, 100 W, 600 V, TO-263, 3 RoHS Compliant: Yes
IGBT 600V 31A 100W D2PAK
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 110112-IRG4BC30FD-SPBF | IRG4BC30FD-SPBF-ND | IRG4BC30FD-SPBF | 97K2279 | IRG4BC30FD-SPBF |
| Product Name | IGBTs - Single - IRG4BC30FD-SPBF | Single IGBTs | IGBT Transistors | Igbt Single Transistor, 31 A, 1.8 V, 100 W, 600 V, To-263, 3 Rohs Compliant Infineon | Discrete Semiconductor Products - Transistors - IGBTs |
| VCE(on) | 1.8 volts |
