IGBT Trench 650V 80A 274W Through Hole PG-TO247-4
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247
TRANSISTOR, IGBT, N-CH, 650V, 80A, TO247; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.35V; Power Dissipation Pd:274W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of RoHS Compliant: Yes
IGBT Transistors To further enhance the best-in-class performance of the TRENCHSTOP 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control l
IGBT TRENCH 650V 80A TO247-4
| DigiKey | Rochester Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Bipolar RF Transistors | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IKZ50N65ES5XKSA1-ND | IKZ50N65ES5XKSA1 | 24AC9032 | IKZ50N65ES5XKSA1 | IKZ50N65ES5XKSA1 |
| Product Name | Single IGBTs | Transistor, Igbt, N-Ch, 650V, 80A, To247; Dc Collector Current Infineon | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs | |
| TJ | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) |
