Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247
IGBT Trench 650V 80A 274W Through Hole PG-TO247-4
IGBT TRENCH 650V 80A TO247-4
IGBT Transistors To further enhance the best-in-class performance of the TRENCHSTOP 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control l
TRANSISTOR, IGBT, N-CH, 650V, 80A, TO247; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.35V; Power Dissipation Pd:274W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of RoHS Compliant: Yes
| Rochester Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IKZ50N65ES5XKSA1 | IKZ50N65ES5XKSA1-ND | IKZ50N65ES5XKSA1 | IKZ50N65ES5XKSA1 | 24AC9032 |
| Product Name | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors | Transistor, Igbt, N-Ch, 650V, 80A, To247; Dc Collector Current Infineon | |
| Package Type | PG-TO247-4 | TO-247; TO-247-4 | TO-3; TO-247 |
