Infineon Technologies AG Single IGBTs IRG4BC30KD-SPBF

Description
IGBT 600V 28A 100W Surface Mount D2PAK
Request a Quote Datasheet
Description
IGBT 600V 28A 100W Surface Mount D2PAK
Request a Quote Datasheet

Suppliers

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Product
Description
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Single IGBTs - IRG4BC30KD-SPBF-ND - DigiKey
Thief River Falls, MN, United States
IGBT 600V 28A 100W Surface Mount D2PAK

IGBT 600V 28A 100W Surface Mount D2PAK

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Single IGBTs IRG4BC30KD-SPBF
IGBT, 28A I(C), 600V V(BR)CES, N

IGBT, 28A I(C), 600V V(BR)CES, N

Supplier's Site Datasheet
IGBTs - Single - IRG4BC30KD-SPBF - 069632-IRG4BC30KD-SPBF - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IRG4BC30KD-SPBF
069632-IRG4BC30KD-SPBF
IGBTs - Single - IRG4BC30KD-SPBF 069632-IRG4BC30KD-SPBF
Manufacturer: Infineon Technologies Win Source Part Number: 069632-IRG4BC30KD-SP BF Packaging: Tube/Rail Mounting: SMD (SMT) Reverse Recovery Time (trr): 42ns Input Type: Standard Gate Charge: 67nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Maximum Current Collector: 28A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 100W Pulsed Collector Current: 56A Collector-emitter saturation voltage(Max): 2.7V @ 15V, 16A Total Switching Energy(Ets): 600μJ (on), 580μJ (off) Turn-on and Turn-off delay time: 60ns/160ns Testing Conditions: 480V, 16A, 23 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 069632-IRG4BC30KD-SPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Reverse Recovery Time (trr): 42ns
Input Type: Standard
Gate Charge: 67nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Maximum Current Collector: 28A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 100W
Pulsed Collector Current: 56A
Collector-emitter saturation voltage(Max): 2.7V @ 15V, 16A
Total Switching Energy(Ets): 600μJ (on), 580μJ (off)
Turn-on and Turn-off delay time: 60ns/160ns
Testing Conditions: 480V, 16A, 23 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited

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Discrete Semiconductor Products - Transistors - IGBTs - IRG4BC30KD-SPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
IRG4BC30KD-SPBF
Discrete Semiconductor Products - Transistors - IGBTs IRG4BC30KD-SPBF
IGBT 600V 28A 100W D2PAK

IGBT 600V 28A 100W D2PAK

Supplier's Site
Sheung Wan, Hong Kong
IGBT Transistors
IRG4BC30KD-SPBF
IGBT Transistors IRG4BC30KD-SPBF
IGBT Transistors 600V ULTRAFAST 8-25 KHZ COPACK IGBT

IGBT Transistors 600V ULTRAFAST 8-25 KHZ COPACK IGBT

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Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IRG4BC30KD-SPBF-ND IRG4BC30KD-SPBF 069632-IRG4BC30KD-SPBF IRG4BC30KD-SPBF IRG4BC30KD-SPBF
Product Name Single IGBTs Single IGBTs IGBTs - Single - IRG4BC30KD-SPBF Discrete Semiconductor Products - Transistors - IGBTs IGBT Transistors
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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