Infineon Technologies AG Single IGBTs IRGB4056DPBF

Description
IGBT Trench 600V 24A 140W Through Hole TO-220AB
  • Single IGBTs - IRGB4056DPBF-ND - DigiKey
    DigiKey
  • IGBTs - Single - IRGB4056DPBF - 040777-IRGB4056DPBF - Win Source Electronics
    Win Source Electronics
  • IRGB4056DPBF - Rochester Electronics
    Rochester Electronics
  • IRGB4056DPBF - Rochester Electronics
    Rochester Electronics
  • Discrete Semiconductor Products - Transistors - IGBTs - IRGB4056DPBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Igbt, 600V, 24A, 175Deg C, 140W; Continuous Collector Current Infineon - 25M9860 - Newark, An Avnet Company
    Newark, An Avnet Company
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Description
IGBT Trench 600V 24A 140W Through Hole TO-220AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - IRGB4056DPBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single IGBTs
IRGB4056DPBF-ND
Single IGBTs IRGB4056DPBF-ND
IGBT Trench 600V 24A 140W Through Hole TO-220AB

IGBT Trench 600V 24A 140W Through Hole TO-220AB

Buy Now Datasheet
IGBTs - Single - IRGB4056DPBF - 040777-IRGB4056DPBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IRGB4056DPBF
040777-IRGB4056DPBF
IGBTs - Single - IRGB4056DPBF 040777-IRGB4056DPBF
Manufacturer: Infineon Technologies Win Source Part Number: 040777-IRGB4056DPBF Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 68ns IGBT Type: Trench Input Type: Standard Gate Charge: 25nC Categories: Discrete Semiconductor Products Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Maximum Current Collector: 24A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 140W Pulsed Collector Current: 48A Collector-emitter saturation voltage(Max): 1.85V @ 15V, 12A Total Switching Energy(Ets): 75μJ (on), 225μJ (off) Turn-on and Turn-off delay time: 31ns/83ns Testing Conditions: 400V, 12A, 22 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 040777-IRGB4056DPBF
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 68ns
IGBT Type: Trench
Input Type: Standard
Gate Charge: 25nC
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Maximum Current Collector: 24A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 140W
Pulsed Collector Current: 48A
Collector-emitter saturation voltage(Max): 1.85V @ 15V, 12A
Total Switching Energy(Ets): 75μJ (on), 225μJ (off)
Turn-on and Turn-off delay time: 31ns/83ns
Testing Conditions: 400V, 12A, 22 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
- IRGB4056DPBF - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
IRGB4056DPBF
IRGB4056DPBF
600V, 12A IGBT with anti-parallel diode

600V, 12A IGBT with anti-parallel diode

Supplier's Site Datasheet
- IRGB4056DPBF - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
IRGB4056DPBF
IRGB4056DPBF
600V, 12A IGBT with anti-parallel diode

600V, 12A IGBT with anti-parallel diode

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
IGBT Transistors
IRGB4056DPBF
IGBT Transistors IRGB4056DPBF
IGBT Transistors 600V UltraFast Trench IGBT

IGBT Transistors 600V UltraFast Trench IGBT

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - IRGB4056DPBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
IRGB4056DPBF
Discrete Semiconductor Products - Transistors - IGBTs IRGB4056DPBF
IGBT TRENCH 600V 24A TO220AB

IGBT TRENCH 600V 24A TO220AB

Supplier's Site
Igbt, 600V, 24A, 175Deg C, 140W; Continuous Collector Current Infineon - 25M9860 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Igbt, 600V, 24A, 175Deg C, 140W; Continuous Collector Current Infineon
25M9860
Igbt, 600V, 24A, 175Deg C, 140W; Continuous Collector Current Infineon 25M9860
IGBT, 600V, 24A, 175DEG C, 140W; Continuous Collector Current:24A; Collector Emitter Saturation Voltage:1.55V; Power Dissipation:140W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes

IGBT, 600V, 24A, 175DEG C, 140W; Continuous Collector Current:24A; Collector Emitter Saturation Voltage:1.55V; Power Dissipation:140W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Rochester Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IRGB4056DPBF-ND 040777-IRGB4056DPBF IRGB4056DPBF IRGB4056DPBF IRGB4056DPBF 25M9860
Product Name Single IGBTs IGBTs - Single - IRGB4056DPBF IGBT Transistors Discrete Semiconductor Products - Transistors - IGBTs Igbt, 600V, 24A, 175Deg C, 140W; Continuous Collector Current Infineon
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) ? to 175 C (? to 347 F)
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB TO-220; TO-220COPAK TO-3
Packing Method Tube Rail; Tube; Tube/Rail Tube; Tube Tube; Tube
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