Manufacturer: Infineon Technologies
Win Source Part Number: 040777-IRGB4056DPBF
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 68ns
IGBT Type: Trench
Input Type: Standard
Gate Charge: 25nC
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Maximum Current Collector: 24A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 140W
Pulsed Collector Current: 48A
Collector-emitter saturation voltage(Max): 1.85V @ 15V, 12A
Total Switching Energy(Ets): 75μJ (on), 225μJ (off)
Turn-on and Turn-off delay time: 31ns/83ns
Testing Conditions: 400V, 12A, 22 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited
IGBT Trench 600V 24A 140W Through Hole TO-220AB
IGBT TRENCH 600V 24A TO220AB Product overview: IRGB4056DPBF from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 24A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 24A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IRGB4056DPBF can be used for catalog matching and distributor lookup.
600V, 12A IGBT with anti-parallel diode
600V, 12A IGBT with anti-parallel diode
IGBT, 600V, 24A, 175DEG C, 140W; Continuous Collector Current:24A; Collector Emitter Saturation Voltage:1.55V; Power Dissipation:140W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes
IGBT Transistors 600V UltraFast Trench IGBT
IGBT TRENCH 600V 24A TO220AB
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Rochester Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 040777-IRGB4056DPBF | IRGB4056DPBF-ND | 279-IRGB4056DPBF | IRGB4056DPBF | 25M9860 | IRGB4056DPBF | IRGB4056DPBF |
| Product Name | IGBTs - Single - IRGB4056DPBF | Single IGBTs | 600V 24A IGBT Transistor | Igbt, 600V, 24A, 175Deg C, 140W; Continuous Collector Current Infineon | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs | |
| VCE(on) | 1.85 volts | ||||||
| PD | 140000 milliwatts | 140 milliwatts | 140000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ? to 175 C (? to 347 F) |
