Infineon Technologies AG Power - IGBT - IGBT Discretes - IKZA40N65EH7 IKZA40N65EH7

Description
Hard-switching 650 V, 40 A TRENCHSTOP™ IGBT7 H7 discrete in TO247-4 package technology has been developed to fulfill the demand in green & efficient energy applications, while also offering significant improvements over its predecessor generations. Summary of Features Excellent VCE(sat) behavior thanks to our famous TRENCHSTOP™ technology Very soft, fast recovery antiparallel diode Offering Tj(max) of 175°C Optimized for hard switching, two and three level topologies Benefits Technology with the high power density with up to 150 A rating Optimized performance in application conditions Lowest conduction losses Lowest switching losses Humidity robustness under harsh environment Improved EMI performance Applications EV charging Photovoltaic Uninterruptible power supplies (UPS)
  • Power - IGBT - IGBT Discretes - IKZA40N65EH7 - IKZA40N65EH7 - Infineon Technologies AG
    Infineon Technologies AG
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Description
Hard-switching 650 V, 40 A TRENCHSTOP™ IGBT7 H7 discrete in TO247-4 package technology has been developed to fulfill the demand in green & efficient energy applications, while also offering significant improvements over its predecessor generations. Summary of Features Excellent VCE(sat) behavior thanks to our famous TRENCHSTOP™ technology Very soft, fast recovery antiparallel diode Offering Tj(max) of 175°C Optimized for hard switching, two and three level topologies Benefits Technology with the high power density with up to 150 A rating Optimized performance in application conditions Lowest conduction losses Lowest switching losses Humidity robustness under harsh environment Improved EMI performance Applications EV charging Photovoltaic Uninterruptible power supplies (UPS)
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Datasheet
Datasheet Summary
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IKZA40N65EH7 is a 650 V, 40 A TRENCHSTOP™ IGBT7 discrete transistor with an integrated fast recovery emitter-controlled diode, designed for hard-switching and multi-level topologies in industrial applications. It is packaged in a TO-247-4 configuration with dimensions of 20.90-21.10 mm in length, 15.70-15.90 mm in width, and 9.80-10.20 mm in height. The device has a maximum junction temperature of 175 °C, a collector-emitter saturation voltage of 1.4-1.65 V at 25 °C, and a thermal resistance from junction to case of 0.54-0.71 K/W for the IGBT and 0.72-0.94 K/W for the diode. It meets JEDEC47/20/22 qualifications for industrial use and is not qualified to AEC-Q100 or AEC-Q101.

Datasheet Summary
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IKZA40N65EH7 is a 650 V, 40 A TRENCHSTOP™ IGBT7 discrete transistor with an integrated fast recovery emitter-controlled diode, designed for hard-switching and multi-level topologies in industrial applications. It is packaged in a TO-247-4 configuration with dimensions of 20.90-21.10 mm in length, 15.70-15.90 mm in width, and 9.80-10.20 mm in height. The device has a maximum junction temperature of 175 °C, a collector-emitter saturation voltage of 1.4-1.65 V at 25 °C, and a thermal resistance from junction to case of 0.54-0.71 K/W for the IGBT and 0.72-0.94 K/W for the diode. It meets JEDEC47/20/22 qualifications for industrial use and is not qualified to AEC-Q100 or AEC-Q101.

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Power - IGBT - IGBT Discretes - IKZA40N65EH7 - IKZA40N65EH7 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - IGBT - IGBT Discretes - IKZA40N65EH7
IKZA40N65EH7
Power - IGBT - IGBT Discretes - IKZA40N65EH7 IKZA40N65EH7
Hard-switching 650 V, 40 A TRENCHSTOP™ IGBT7 H7 discrete in TO247-4 package technology has been developed to fulfill the demand in green & efficient energy applications, while also offering significant improvements over its predecessor generations. Summary of Features Excellent VCE(sat) behavior thanks to our famous TRENCHSTOP™ technology Very soft, fast recovery antiparallel diode Offering Tj(max) of 175°C Optimized for hard switching, two and three level topologies Benefits Technology with the high power density with up to 150 A rating Optimized performance in application conditions Lowest conduction losses Lowest switching losses Humidity robustness under harsh environment Improved EMI performance Applications EV charging Photovoltaic Uninterruptible power supplies (UPS)

Hard-switching 650 V, 40 A TRENCHSTOP™ IGBT7 H7 discrete in TO247-4 package technology has been developed to fulfill the demand in green & efficient energy applications, while also offering significant improvements over its predecessor generations.


Summary of Features

  • Excellent VCE(sat) behavior thanks to our famous TRENCHSTOP™ technology
  • Very soft, fast recovery antiparallel diode
  • Offering Tj(max) of 175°C
  • Optimized for hard switching, two and three level topologies

Benefits

  • Technology with the high power density with up to 150 A rating
  • Optimized performance in application conditions
  • Lowest conduction losses
  • Lowest switching losses
  • Humidity robustness under harsh environment
  • Improved EMI performance

Applications

  • EV charging
  • Photovoltaic
  • Uninterruptible power supplies (UPS)
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IKZA40N65EH7
Product Name Power - IGBT - IGBT Discretes - IKZA40N65EH7
VCE(on) 650 volts
Switching Speed 16 to 100 kHz
tr 11 ns
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