The IRG4PH30KDPBF is a single IGBT (Insulated Gate Bipolar Transistor) manufactured by Infineon Technologies, suitable for high-frequency DC-DC converters and switch-mode power supplies (SMPS). It features a maximum collector-emitter breakdown voltage of 1200V and a continuous collector current rating of 20A, with a pulsed collector current capability of up to 40A. The device has a maximum power dissipation of 100W and a collector-emitter saturation voltage of 4.2V at 15V and 10A. The IGBT operates within a temperature range of -55¬8C to 150¬8C and has a total gate charge of 53nC. It exhibits a reverse recovery time of 50ns, making it suitable for applications requiring fast switching. The part is halogen-free and compliant with environmental standards. It is packaged in a TO-247AC case, designed for through-hole mounting. The IRG4PH30KDPBF is a commonly used component with a high popularity rating, indicating a balanced supply and demand status in the market.
IGBT 1200V 20A 100W TO247AC Product overview: IRG4PH30KDPBF from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 20A, 100W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 20A, 100W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IRG4PH30KDPBF can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 143170-IRG4PH30KDPBF
Packaging: Bulk
Mounting: Through Hole
Reverse Recovery Time (trr): 50ns
Input Type: Standard
Gate Charge: 53nC
Family Name: IRG4PH30KD
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AC
Maximum Current Collector: 20A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 100W
Pulsed Collector Current: 40A
Collector-emitter saturation voltage(Max): 4.2V @ 15V, 10A
Total Switching Energy(Ets): 950μJ (on), 1.15mJ (off)
Turn-on and Turn-off delay time: 39ns/220ns
Testing Conditions: 800V, 10A, 23 Ohm, 15V
Alternative Parts (Cross-Reference): IXSH10N120AU1; IXYJ20N120C3D1; HGTG5N120BND_NL;
Introduction Date: June 17, 2004
ECCN: EAR99
Country of Origin: Mexico
Estimated EOL Date: 2019
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance
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| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-IRG4PH30KDPBF | 143170-IRG4PH30KDPBF | IRG4PH30KDPBF-ND | IRG4PH30KDPBF | IRG4PH30KDPBF | IRG4PH30KDPBF |
| Product Name | 1200V 20A 100W IGBT Transistor | IGBTs - Single - IRG4PH30KDPBF | Single IGBTs | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
