Infineon Technologies AG Single IGBTs IRGB15B60KDPBF

IGBT NPT 600V 31A 208W Through Hole TO-220AB

Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations
Maximum Continuous Collector Current = 31 A
Maximum Collector Emitter Voltage = 600 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 208 W
Package Type = TO-220AB
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Switching Speed = 8 - 30kHz
Transistor Configuration = Single

Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations
Maximum Continuous Collector Current = 31 A
Maximum Collector Emitter Voltage = 600 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 208 W
Package Type = TO-220AB
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Switching Speed = 8 - 30kHz
Transistor Configuration = Single
Delivery on production packaging - Tube. This product is non-returnable.

Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations
Maximum Continuous Collector Current = 31 A
Maximum Collector Emitter Voltage = 600 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 208 W
Package Type = TO-220AB
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Switching Speed = 8 - 30kHz
Transistor Configuration = Single

Manufacturer: Infineon Technologies
Win Source Part Number: 083526-IRGB15B60KDPBF
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 92ns
IGBT Type: NPT
Input Type: Standard
Gate Charge: 56nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Maximum Current Collector: 31A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 208W
Pulsed Collector Current: 62A
Collector-emitter saturation voltage(Max): 2.2V @ 15V, 15A
Total Switching Energy(Ets): 220μJ (on), 340μJ (off)
Turn-on and Turn-off delay time: 34ns/184ns
Testing Conditions: 400V, 15A, 22 Ohm, 15V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance

IRGB15B60 - Discrete IGBT with Anti-Parallel Diode

IRGB15B60 - Discrete IGBT with Anti-Parallel Diode

IGBT 600V 31A 208W TO220AB