Infineon Technologies AG IGBTs - Single - IRG4PH50S-EPBF IRG4PH50S-EPBF

Manufacturer: Infineon Technologies
Win Source Part Number: 1047319-IRG4PH50S-EPBF
Packaging: Tube/Rail
Mounting: Through Hole
Input Type: Standard
Gate Charge: 167nC
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD
Maximum Current Collector: 57A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 200W
Pulsed Collector Current: 114A
Collector-emitter saturation voltage(Max): 1.7V @ 15V, 33A
Total Switching Energy(Ets): 1.8mJ (on), 19.6mJ (off)
Turn-on and Turn-off delay time: 32ns/845ns
Testing Conditions: 960V, 33A, 5 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance

IGBT 1200V 57A 200W Through Hole TO-247AD

IGBT 1200V 57A TO247AD Product overview: IRG4PH50S-EPBF from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 57A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 57A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IRG4PH50S-EPBF can be used for catalog matching and distributor lookup.