Infineon Technologies AG 1200V 57A IGBT Transistor IRG4PH50S-EPBF

Description
IGBT 1200V 57A TO247AD Product overview: IRG4PH50S-EPBF from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 57A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 57A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IRG4PH50S-EPBF can be used for catalog matching and distributor lookup.
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Description
IGBT 1200V 57A TO247AD Product overview: IRG4PH50S-EPBF from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 57A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 57A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IRG4PH50S-EPBF can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
1200V 57A IGBT Transistor
279-IRG4PH50S-EPBF
1200V 57A IGBT Transistor 279-IRG4PH50S-EPBF
IGBT 1200V 57A TO247AD Product overview: IRG4PH50S-EPBF from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 57A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 57A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IRG4PH50S-EPBF can be used for catalog matching and distributor lookup.

IGBT 1200V 57A TO247AD Product overview: IRG4PH50S-EPBF from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 57A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 57A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IRG4PH50S-EPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
IGBTs - Single - IRG4PH50S-EPBF - 1047319-IRG4PH50S-EPBF - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IRG4PH50S-EPBF
1047319-IRG4PH50S-EPBF
IGBTs - Single - IRG4PH50S-EPBF 1047319-IRG4PH50S-EPBF
Manufacturer: Infineon Technologies Win Source Part Number: 1047319-IRG4PH50S-EP BF Packaging: Tube/Rail Mounting: Through Hole Input Type: Standard Gate Charge: 167nC Categories: Discrete Semiconductor Products Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD Maximum Current Collector: 57A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 200W Pulsed Collector Current: 114A Collector-emitter saturation voltage(Max): 1.7V @ 15V, 33A Total Switching Energy(Ets): 1.8mJ (on), 19.6mJ (off) Turn-on and Turn-off delay time: 32ns/845ns Testing Conditions: 960V, 33A, 5 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1047319-IRG4PH50S-EPBF
Packaging: Tube/Rail
Mounting: Through Hole
Input Type: Standard
Gate Charge: 167nC
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD
Maximum Current Collector: 57A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 200W
Pulsed Collector Current: 114A
Collector-emitter saturation voltage(Max): 1.7V @ 15V, 33A
Total Switching Energy(Ets): 1.8mJ (on), 19.6mJ (off)
Turn-on and Turn-off delay time: 32ns/845ns
Testing Conditions: 960V, 33A, 5 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single IGBTs - IRG4PH50S-EPBF-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
IRG4PH50S-EPBF-ND
Single IGBTs IRG4PH50S-EPBF-ND
IGBT 1200V 57A 200W Through Hole TO-247AD

IGBT 1200V 57A 200W Through Hole TO-247AD

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - IRG4PH50S-EPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
IRG4PH50S-EPBF
Discrete Semiconductor Products - Transistors - IGBTs IRG4PH50S-EPBF
IGBT 1200V 57A TO247AD

IGBT 1200V 57A TO247AD

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 279-IRG4PH50S-EPBF 1047319-IRG4PH50S-EPBF IRG4PH50S-EPBF-ND IRG4PH50S-EPBF
Product Name 1200V 57A IGBT Transistor IGBTs - Single - IRG4PH50S-EPBF Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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