Infineon Technologies AG Datasheets for Metal-Oxide Semiconductor FET (MOSFET)
Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts.
Metal-Oxide Semiconductor FET (MOSFET): Learn more
| Product Name | Notes |
|---|---|
| 650V CoolMOS™ N-channel automotive SJ power MOSFET CFD7A The 50mOhm IPB65R050CFD7A in D2PAK 3-pin package is part of the automotive-qualified 650V CoolMOS™ SJ power MOSFET CFD7A product family. | |
| 650V CoolMOS™ N-channel automotive SJ power MOSFET CFD7A The 75 mOhm IPB65R075CFD7A in D2PAK 3-pin package is part of the automotive-qualified 650V CoolMOS™ SJ power MOSFET CFD7A product... | |
| Combining a low RDS(on) with a wide safe operating area (SOA) OptiMOS™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear... | |
| CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss... | |
| Industry leading power MOSFET technology for telecom and server applications with OptiMOS™ 5 80V in D2PAK package Infineon’s OptiMOS™ 5 80V industrial power MOSFET IPB020N08N5 offers a R... | |
| Industry leading power MOSFET technology for telecom and server applications with OptiMOS™ 5 80V in D2PAK package Infineon’s OptiMOS™ 5 80V industrial power MOSFET IPB031N08N5 offers a R... | |
| Infineon’s 600V CoolMOS™ CFD7 Superjunction MOSFET IPB60R040CFD7 in D2PAK package is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations,... | |
| Infineon’s 600V CoolMOS™ CFD7 Superjunction MOSFET IPB60R070CFD7 in D2PAK package is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations,... | |
| Infineon’s 600V CoolMOS™ CFD7 Superjunction MOSFET IPB60R105CFD7 in D2PAK package is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations,... | |
| Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over... | |
| Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both... | |
| Infineon's 200 V OptiMOS™ products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48 V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor... | |
| Infineon's 250V OptiMOS™ products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. Summary... | |
| Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering... | |
| IPB038N15NM6 OptiMOS™ 6 150 V in normal level is setting a new level of performance within the highly competitive 150 V market. OptiMOS™ 6 150 V technology was designed to... | |
| IPB051N15NM6 leverages OptiMOS™ 6 150 V unparalleled performance and robustness for a suitable alternative to legacy OptiMOS™ 3 and OptiMOS™ 5 150 V products. OptiMOS™ 6 150 V technology was... | |
| IPB057N15NM6 leverages OptiMOS™ 6 150 V unparalleled performance and robustness for a suitable alternative to legacy OptiMOS™ 3 and OptiMOS™ 5 150 V products. OptiMOS™ 6 150 V technology was... | |
| IPB085N15NM6 leverages OptiMOS™ 6 150 V unparalleled performance and robustness for a suitable alternative to legacy StrongIRFET™ and OptiMOS™ 3 150 V products. OptiMOS™ 6 150 V technology was designed... | |
| Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the... | |
| Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use The 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need... | |
| OptiMOS™ 5 100 V power MOSFET in D2PAK package with 22% lower RDS(on) for telecom and server power supply applications OptiMOS™ 5 100 V power MOSFET IPB020N10N5... | |
| OptiMOS™ 5 100V power MOSFET in D2PAK 7pin package with 22% lower RDS(on) for telecom and server power supply applications OptiMOS™ 5 100V power MOSFET IPB032N10N5 from... | |
| OptiMOS™ 5 100V power MOSFET in D2PAK package with 22% lower RDS(on) for telecom and server power supply applications OptiMOS™ 5 100V power MOSFET IPB027N10N5 from Infineon... | |
| OptiMOS™ 5 150V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The products offer a... | |
| OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are... | |
| OptiMOS™ 5 single N-channel Linear FET 2 100 V, 2,1 mΩ, 176 A in D²PAK 3-pin The OptiMOS™ 5 Linear FET 2 technology enables best-in-class trade-off between on-state resistance and... | |
| OptiMOS™ 6 power MOSFET 150 V normal level in D²PAK 3-pin package IPB029N15NM6 OptiMOS™ 6 150 V in normal level is setting a new level of performance within the highly... | |
| OptiMOS™ 6 power MOSFET 200 V normal level in D²PAK 3-pin package IPB068N20NM6 OptiMOS™ 6 200 V is setting the new technology standard. It addresses the need for high power... | |
| OptiMOS™ 6 power MOSFET 200 V normal level in D²PAK 3-pin package IPB095N20NM6 leverages the advanced cell design of the OptiMOS™ 6 200 V technology to provide suitable alternative to... | |
| OptiMOS™ 6 power MOSFET 200 V normal level in D²PAK 3-pin package IPB339N20NM6 OptiMOS™ 6 200 V is setting the new technology standard. It addresses the need for high power... | |
| OptiMOS™ 6 power MOSFET normal level 120 V in D²PAK 3-pin package This is a normal level 120 V MOSFET in D²PAK 3-pin packaging with 13.3 mOhm on-resistance. IPB133N12NM6 is... | |
| OptiMOS™ 6 power MOSFET normal level 120 V in D²PAK 3-pin package This is a normal level 120 V MOSFET in D²PAK 3-pin packaging with 2.2 mOhm on-resistance. IPB022N12NM6 is... | |
| OptiMOS™ 6 power MOSFET normal level 120 V in D²PAK 3-pin package This is a normal level 120 V MOSFET in D²PAK 3-pin packaging with 3.5 mOhm on-resistance. IPB035N12NM6 is... | |
| OptiMOS™ 60 V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these... | |
| OptiMOS™ Fast Diode (FD) 200V, 250V and 300V is optimized for body diode hard commutation. These devices are the perfect choice for hard switching applications such as telecom, industrial power... | |
| OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). Summary of... | |
| OptiMOS™ P-Channel MOSFET 100V in D²PAK OptiMOS™ P-Channel MOSFETs 100V in D²PAK package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main... | |
| OptiMOS™ P-Channel MOSFET 100V in D²PAK OptiMOS™P-Channel MOSFETs 100V in D²PAK package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage... | |
| StrongIRFET™ 2 single N-channel power MOSFET 100 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 2.6 mOhm, addressing a broad range of... | |
| StrongIRFET™ 2 single N-channel power MOSFET 100 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 3.5 mOhm, addressing a broad range of... | |
| StrongIRFET™ 2 single N-channel power MOSFET 100 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 4.3 mOhm, addressing a broad range of... | |
| StrongIRFET™ 2 single N-channel power MOSFET 100 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 5 mOhm, addressing a broad range of... | |
| StrongIRFET™ 2 single N-channel power MOSFET 60 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 60 V features low RDS(on) of 2.9 mOhm, addressing a broad range of... | |
| StrongIRFET™ 2 single N-channel power MOSFET 80 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 80 V features low RDS(on) of 1.9 mOhm, addressing a broad range of... | |
| StrongIRFET™ 2 single N-channel power MOSFET 80 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 80 V features low RDS(on) of 2.4 mOhm, addressing a broad range of... | |
| StrongIRFET™ 2 single N-channel power MOSFET 80 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 80 V features low RDS(on) of 4 mOhm, addressing a broad range of... | |
| StrongIRFET™ 2 single N-channel power MOSFET 80 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 80 V features low RDS(on) of 5.5 mOhm, addressing a broad range of... | |
| Summary of Features AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (RoHS compliant) 100% Avalanche tested Benefits No charge pump required for high side drive. | |
| Summary of Features N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra low RDSon Ultra... | |
| Summary of Features N-channel - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Benefits world's lowest RDS at... | |
| Summary of Features N-channel - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Benefits world's... | |
| Summary of Features N-channel - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Simulation/SPICE-Mod el... | |
| Summary of Features N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) 100% Avalanche tested Benefits highest current... | |
| Summary of Features N-channel Logic Level - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) 100% Avalanche teste Simulation/SPICE-Mod el Applications... | |
| Summary of Features Worldwide best RDS(on) in TO-220 package Ultra low gate charge Extreme dv/dt rated High peak current capability Automotive AEC Q101 qualified Green package (RoHS compliant) Potential... | |
| The 120 V OptiMOS™ family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in... | |
| The 150 V OptiMOS™ achieves a reduction in RDS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens... | |
| The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650V CoolMOS™ CFD7 superjunction MOSFET IPB65R041CFD7 in a D... | |
| The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650V CoolMOS™ CFD7 superjunction MOSFET IPB65R090CFD7 in a D... | |
| The OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new... | |
| The OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklifts and e-scooters, as well as telecom and solar applications. The new... |
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