N-Channel 650V 31.2A (Tc) 34.7W (Tc) Through Hole PG-TO220-3-111
MOSFET N-CH 650V 31.2A TO220
MOSFET, N-CH, 700V, 31.2A, TO-220FP-3; Transistor Polarity:N Channel; Continuous Drain Current Id:31.2A; Drain Source Voltage Vds:700V; On Resistance Rds(on):0.099ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
| DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPA65R110CFDXKSA1-ND | IPA65R110CFDXKSA1 | 49AC0278 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 700V, 31.2A, To-220Fp-3; Transistor Polarity Infineon |
| Polarity | N-Channel |
