Infineon Technologies AG 600V 8.1A TO220 MOSFET Transistor IPA60R520E6

Description
MOSFET N-CH 600V 8.1A TO220 Product overview: IPA60R520E6 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 8.1A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 8.1A, TO220, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPA60R520E6 can be used for catalog matching and distributor lookup.
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Description
MOSFET N-CH 600V 8.1A TO220 Product overview: IPA60R520E6 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 8.1A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 8.1A, TO220, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPA60R520E6 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore, Singapore
600V 8.1A TO220 MOSFET Transistor
285-IPA60R520E6
600V 8.1A TO220 MOSFET Transistor 285-IPA60R520E6
MOSFET N-CH 600V 8.1A TO220 Product overview: IPA60R520E6 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 8.1A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 8.1A, TO220, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPA60R520E6 can be used for catalog matching and distributor lookup.

MOSFET N-CH 600V 8.1A TO220 Product overview: IPA60R520E6 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 8.1A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 8.1A, TO220, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPA60R520E6 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA60R520E6 - 205214-IPA60R520E6 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA60R520E6
205214-IPA60R520E6
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA60R520E6 205214-IPA60R520E6
Manufacturer: Infineon Technologies Win Source Part Number: 205214-IPA60R520E6 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 29W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO-220-FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 8.1A (Tc) Gate-Source Threshold Voltage: 3.5V @ 230μA Max Gate Charge: 23.4nC @ 10V Max Input Capacitance: 512pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 520 mOhm @ 2.8A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 205214-IPA60R520E6
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 29W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO-220-FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 8.1A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 230μA
Max Gate Charge: 23.4nC @ 10V
Max Input Capacitance: 512pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 520 mOhm @ 2.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Transistors - IPA60R520E6 - ODG (Origin Data Global)
Shenzhen, China
Transistors
IPA60R520E6
Transistors IPA60R520E6
TO-220 MOSFETs ROHS

TO-220 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number 285-IPA60R520E6 205214-IPA60R520E6 IPA60R520E6
Product Name 600V 8.1A TO220 MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA60R520E6 Transistors
Polarity N-Channel N-Channel; N-Channel
PD 29000 milliwatts 29000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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