Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA60R165CP IPA60R165CP

Description
Manufacturer: Infineon Technologies Win Source Part Number: 068942-IPA60R165CP Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 34W (Tc) Family Name: IPA60R165CP Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO-220-FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 21A (Tc) Gate-Source Threshold Voltage: 3.5V @ 660μA Max Gate Charge: 52nC @ 10V Max Input Capacitance: 2000pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 165 mOhm @ 12A, 10V Alternative Parts (Cross-Reference): R6524ENX; STF24NM65N; R6524KNX; Introduction Date: December 22, 2005 ECCN: EAR99 Country of Origin: China, Philippines Estimated EOL Date: 2019 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 068942-IPA60R165CP Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 34W (Tc) Family Name: IPA60R165CP Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO-220-FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 21A (Tc) Gate-Source Threshold Voltage: 3.5V @ 660μA Max Gate Charge: 52nC @ 10V Max Input Capacitance: 2000pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 165 mOhm @ 12A, 10V Alternative Parts (Cross-Reference): R6524ENX; STF24NM65N; R6524KNX; Introduction Date: December 22, 2005 ECCN: EAR99 Country of Origin: China, Philippines Estimated EOL Date: 2019 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA60R165CP - 068942-IPA60R165CP - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA60R165CP
068942-IPA60R165CP
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA60R165CP 068942-IPA60R165CP
Manufacturer: Infineon Technologies Win Source Part Number: 068942-IPA60R165CP Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 34W (Tc) Family Name: IPA60R165CP Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO-220-FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 21A (Tc) Gate-Source Threshold Voltage: 3.5V @ 660μA Max Gate Charge: 52nC @ 10V Max Input Capacitance: 2000pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 165 mOhm @ 12A, 10V Alternative Parts (Cross-Reference): R6524ENX; STF24NM65N; R6524KNX; Introduction Date: December 22, 2005 ECCN: EAR99 Country of Origin: China, Philippines Estimated EOL Date: 2019 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 068942-IPA60R165CP
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 34W (Tc)
Family Name: IPA60R165CP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO-220-FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 21A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 660μA
Max Gate Charge: 52nC @ 10V
Max Input Capacitance: 2000pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 165 mOhm @ 12A, 10V
Alternative Parts (Cross-Reference): R6524ENX; STF24NM65N; R6524KNX;
Introduction Date: December 22, 2005
ECCN: EAR99
Country of Origin: China, Philippines
Estimated EOL Date: 2019
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
600V 21A MOSFET Transistor
2088-IPA60R165CP
600V 21A MOSFET Transistor 2088-IPA60R165CP
MOSFETs N-Ch 600V 21A TO220FP-3 CoolMOS CP Product overview: IPA60R165CP from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 21A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 21A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPA60R165CP can be used for catalog matching and distributor lookup.

MOSFETs N-Ch 600V 21A TO220FP-3 CoolMOS CP Product overview: IPA60R165CP from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 21A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 21A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPA60R165CP can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IPA60R165CP - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IPA60R165CP
Single FETs, MOSFETs IPA60R165CP
MOSFET N-CH 600V 21A TO220

MOSFET N-CH 600V 21A TO220

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 600V 21A TO220FP-3 CoolMOS CP

MOSFET N-Ch 600V 21A TO220FP-3 CoolMOS CP

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 068942-IPA60R165CP 2088-IPA60R165CP IPA60R165CP IPA60R165CP
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA60R165CP 600V 21A MOSFET Transistor Single FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 600 volts 600 volts
PD 34000 milliwatts 34 milliwatts 34000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-220; SOT3; PG-TO-220-FP Tube TO-220; TO-220-3 Full Pack
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