MOSFET N-CH 60V 100A D2PAK Product overview: IPB050N06NGATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB050N06NGATMA1
N-Channel 60V 100A (Tc) 300W (Tc) Surface Mount PG-TO263-3
Manufacturer: Infineon Technologies
Win Source Part Number: 1045765-IPB050N06NGA
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO263-2
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 100A (Tc)
Gate-Source Threshold Voltage: 4V @ 270μA
Max Gate Charge: 167nC @ 10V
Max Input Capacitance: 6100pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.7 mOhm @ 100A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 60V 100A D2PAK
Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) TO-263
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IPB050N06NGATMA1 | IPB050N06NGATMA1TR-ND | 1045765-IPB050N06NGATMA1 | IPB050N06NGATMA1 | 376-IPB050N06NGATMA1 |
| Product Name | 60V 100A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB050N06NGATMA1 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) TO-263 |
| PD | 300000 milliwatts | 300000 milliwatts | 300000 milliwatts | ||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||
| Package Type | Tape & Reel (TR) | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3; PG-TO263-2 | 167 nC @ 10 V | |
| Packing Method | Tape & Reel (TR) | Tape Reel; Reel - TR | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | Tape Reel; Tape & Reel (TR) | |
| Polarity | N-Channel | N-Channel; N-Channel |
