Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB016N06L3 G IPB016N06L3 G

Manufacturer: Infineon Technologies
Win Source Part Number: 142745-IPB016N06L3 G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 250W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO263-7
Dimension: TO-263-7, D2Pak (6 Leads + Tab)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 180A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 196μA
Max Gate Charge: 166nC @ 4.5V
Max Input Capacitance: 28000pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.6 mOhm @ 100A, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited

MOSFETs N-Ch 60V 180A D2PAK-6 OptiMOS 3 Product overview: IPB016N06L3 G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 180A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 180A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPB016N06L3 G can be used for catalog matching and distributor lookup.