MOSFET N-CH 100V 120A D2PAK Product overview: IPB027N10N5ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 120A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 120A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB027N10N5ATMA1
Manufacturer: Infineon Technologies
Win Source Part Number: 921251-IPB027N10N5AT
Series: OptiMOS™
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: N-Channel 100 V 120A (Tc) 250W (Tc) Surface Mount PG-TO263-3
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Package: Reel - TR
Mounting: Surface Mount
Family Name: IPB027
Categories: Discrete Semiconductor Products
Case / Package: PG-TO263-3
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
Quantity per package: 1000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: IPB027N10N5ATMA1CT, SP001227034, IPB027N10N5ATMA1TR, IPB027N10N5ATMA1DKR
N-Channel 100V 120A (Tc) 250W (Tc) Surface Mount PG-TO263-3
N-Channel 100V 120A (Tc) 250W (Tc) Surface Mount PG-TO263-3
N-Channel 100V 120A (Tc) 250W (Tc) Surface Mount PG-TO263-3
MOSFET, N-CH, 100V, 166A, 175DEG C, 250W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:166A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET N-CH 100V 120A D2PAK
MOSFET N-Ch 100V 120A D2PAK-2
MOSFET N-CH 100V 120A D2PAK
| ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | Win Source Electronics | DigiKey | Newark, An Avnet Company | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IPB027N10N5ATMA1 | 2183027 | 921251-IPB027N10N5ATMA1 | IPB027N10N5ATMA1CT-ND | 34AC1652 | IPB027N10N5ATMA1 | IPB027N10N5ATMA1 | IPB027N10N5ATMA1 |
| Product Name | 100V 120A MOSFET Transistor | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB027N10N5ATMA1 | Single FETs, MOSFETs | Mosfet, N-Ch, 100V, 166A, 175Deg C, 250W; Channel Type Infineon | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 100 volts | 100 volts | ||||||
| Transconductance | 0.1020 kS | |||||||
| PD | 250 milliwatts | 250000 milliwatts |
