Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPAW60R380CE IPAW60R380CE

Manufacturer: Infineon Technologies
Win Source Part Number: 205220-IPAW60R380CE
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
FET Feature: Super Junction
Polarity: N-Channel
Power Dissipation (Max): 31W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: PG-TO220 Full Pack
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 15A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 320μA
Max Gate Charge: 32nC @ 10V
Max Input Capacitance: 700pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 380 mOhm @ 3.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited

MOSFET N-CH 600V TO220-3 Product overview: IPAW60R380CE from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, TO220, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPAW60R380CE can be used for catalog matching and distributor lookup.