MOSFET N-CH 650V 7.3A TO220-FP Product overview: IPA65R600E6XKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 7.3A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 7.3A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPA65R600E6XKSA1
Manufacturer: Infineon Technologies
Win Source Part Number: 1325365-IPA65R600E6X
Category: Discrete Semiconductor Products>Transistors
Packaging: Tube
Standard Package: 50
Mounting: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Power Dissipation (Max): 28W (Tc)
Supplier Device Package: PG-TO220-FP
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-220-3 Full Pack
ECCN: EAR99
Fake Threat In the Open Market: 68
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: SP000799140,IPA65R60
Base Product Number: IPA65R600
Product Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant
N-Channel 650V 7.3A (Tc) 28W (Tc) Through Hole PG-TO220-FP
MOSFET N-CH 650V 7.3A TO220-FP
MOSFET Transistor, N Channel, 7.3 A, 700 V, 0.54 ohm, 10 V, 3 V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IPA65R600E6XKSA1 | 1325365-IPA65R600E6XKSA1 | 448-IPA65R600E6XKSA1-ND | IPA65R600E6XKSA1 | 85X6011 |
| Product Name | 650V 7.3A TO220 MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Transistor, N Channel, 7.3 A, 700 V, 0.54 Ohm, 10 V, 3 V Rohs Compliant Infineon |
| MOSFET Operating Mode | Enhancement | ||||
| V(BR)DSS | 650 volts | ||||
| PD | 28000 milliwatts | 28000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |