Infineon Technologies AG Datasheets for Metal-Oxide Semiconductor FET (MOSFET)

Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts.
Metal-Oxide Semiconductor FET (MOSFET): Learn more

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Product Name Notes
2000 V, 60 A Boost EasyPACK™ 3B CoolSiC™ MOSFET Module EasyPACK™ 3B CoolSiC™ MOSFET 2000 V 60 A Boost module with PressFit PIN and NTC. Summary of Features Best in...
3-Level 1200 V CoolSiC™ MOSFET Easy Module EasyPACK™ 2B 1200 V / 8 mΩ 3-Level module with CoolSiC™ MOSFET with enhanced generation 1, integrated NTC temperature sensor, pre-applied thermal interface...
62 mm CoolSiC™ MOSFET common source module 2000 V, 2.6 mΩ G1 in the well known 62mm housing with M1H chip technology. Summary of Features High current density Low switching...
62 mm CoolSiC™ MOSFET half bridge module 1200 V, 1.6 mΩ G1 in the well known 62mm housing combined with M1H chip technology. Also available with pre-applied Thermal Interface Material...
62 mm CoolSiC™ MOSFET half bridge module 1200 V, 2.1 mΩ G1 in the well known 62mm housing combined with M1H chip technology and pre-applied Thermal Interface Material (TIM). Summary...
62 mm CoolSiC™ MOSFET half bridge module 2000 V, 2.6 mΩ G1 in the well known 62mm housing combined with M1H chip technology and pre-applied Thermal Interface Material (TIM). Summary...
62 mm CoolSiC™ MOSFET half bridge module 2000 V, 2.6 mΩ G1 in the well known 62mm housing with M1H chip technology. Also available with pre-applied Thermal Interface Material (TIM).
Applications Automotive Automotive secondary power distribution unit Diesel direct injection High-voltage DC-DC converter for electric vehicles Power conversion EasyPACK™ CoolSiC™ Automotive MOSFET 1200V Half Bridge Module EasyPACK™ 1B, 8...
Best-in-class OptiMOS™ 5 25V power MOSFET in high performance PQFN 3.3x3.3mm package for further performance improvement Infineon extends its’ high performance MOSFET portfolio with BSZ009NE2LS5 OptiMOS™ 5 25V power MOSFET...
Booster 1200 V CoolSiC™ MOSFET Module EasyPACK™ 1B 1200 V, 33 mΩ and 2 MPPTs booster module with CoolSiC™ MOSFET enhanced generation 1, NTC and PressFIT Contact Technology Summary of...
Booster 1200 V CoolSiC™ MOSFET Module EasyPACK™ 1B 1200 V, 33 mΩ and 3 MPPTs booster module with CoolSiC™ MOSFET enhanced generation 1, NTC and PressFIT Contact Technology. Summary of...
Complementary power MOSFETs - an n-channel and a p-channel power MOSFET within the same package - are part of Infineon’s famous low voltage OptiMOS™ families, the market leader in high...
EasyDUAL™ 2B CoolSiC™ MOSFET half-bridge module 1200 V, 11 mΩ G1 with integrated NTC temperature sensor, PressFIT contact technology and pre-applied thermal interface material (TIM). Summary of Features Best-in-class packages...
EasyPACK™ 1B 1200 V, 16 mΩ and 2 MPPTs booster module with CoolSiC™ MOSFET enhanced generation 1 and PressFIT Contact Technology. Summary of Features Best-in-class packages with 12 mm height...
EasyPACK™ 1B 1200 V, 33 mΩ and 1 MPPTs booster module with CoolSiC™ MOSFET enhanced generation 1, NTC and PressFIT Contact Technology. Summary of Features Easy family with 12mm height...
EasyPACK™ 1B CoolSiC™ MOSFET 1200 V, 17 mΩ booster single MPPT module with enhanced generation 1, NTC and PressFIT Contact Technology. Summary of Features Best-in-class packages with 12 mm height...
EasyPACK™ 1B CoolSiC™ MOSFET fourpack module 1200 V, 17 mΩ G1 with NTC and PressFIT contact technology. Summary of Features Best-in-class packages with 12 mm height Leading edge WBG material...
EasyPACK™ 1B CoolSiC™ MOSFET fourpack module 1200 V, 17 mΩ G1 with NTC, pre-applied thermal interface material (TIM) and PressFIT contact technology. Summary of Features Best-in-class packages with 12 mm...
EasyPACK™ 1B CoolSiC™ MOSFET fourpack module 1200 V, 33 mΩ G1 with NTC and PressFIT contact technology. Summary of Features Best-in-class packages with 12 mm height Leading edge WBG material...
EasyPACK™ 1B Module with fast TRENCHSTOP™ IGBT3, Rapid 1 diode and PressFIT / NTC Summary of Features Automotive High Speed IGBT H3 and Rapid 1 Diode Low Switching Losses Low...
EasyPACK™ 2B 750V, 300A half bridge automotive qualified IGBT module The FF300R08W2P2_B11A is a very compact and flexible product for inverter applications of hybrid and electric vehicles. This 750 V,...
EasyPACK™ 2B CoolSiC™ MOSFET 3-level module 2000 V, 6 mΩ with NTC temperature sensor, PressFIT Contact Technology and aluminium nitride ceramic. Summary of Features Best in Class packages with 12mm...
EasyPACK™ 3B CoolSiC™ MOSFET 1200 V, 3 mOhm ANPC module with L7, EC7, integrated NTC temperature sensor and High Current Pin. Summary of Features Easy family with 12mm height enhanced...
EasyPACK™ 3B CoolSiC™ MOSFET 2000 V half-bridge module, integrated NTC temperature sensor and High Current Pin. Summary of Features Easy family with 12mm height Gate-source voltages of +23 V and...
EasyPACK™ 3B CoolSiC™ MOSFET fourpack module 1200 V, 11 mΩ with NTC temperature sensor and PressFIT Contact Technology. Summary of Features Best in Class packages with 12mm height Leading edge...
EasyPACK™ 3B CoolSiC™ MOSFET fourpack module 2000 V, 10 mΩ G1 with NTC temperature sensor and PressFIT Contact Technology. Summary of Features Best in Class packages with 12 mm height...
EasyPACK™ 3B, CoolSiC™ MOSFET fourpack module 2000 V, 6 mΩ G1 with NTC temperature sensor and PressFIT Contact Technology Summary of Features Best in Class packages with 12 mm height...
EconoDUAL™ 3 CoolSiC™ MOSFET half-bridge module 1200 V, 1.4 mΩ with enhanced generation 1, integrated NTC temperature sensor, PressFIT Contact Technology and wave structure on the back side of the...
EconoDUAL™ 3 CoolSiC™ MOSFET half-bridge module 1200 V, 1.4 mΩ with enhanced generation 1, integrated NTC temperature sensor, PressFIT contact technology, and pre-applied Thermal Interface Material. Also available with wave...
Half-bridge 1200 V CoolSiC™ MOSFET Easy Module EasyDUAL™ 3B 1200 V / 1.44 mΩ halfbridge module with CoolSiC™ MOSFET with enhanced generation 1, integrated NTC temperature sensor and PressFIT Contact...
HybridPACKTM DSC S1 700 V, 400 A half-bridge TRENCHSTOPTM IGBT3 including matching diodes with enhanced softness is a very compact IGBT molded module targeting hybrid and electric vehicles.
Industry leading power MOSFET technology for telecom and server applications with OptiMOS™ 5 80V in S3O8 package Infineon’s OptiMOS™ 5 80V industrial power MOSFET BSZ084N08NS5 offers a RDS(on) reduction...
Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance...
Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both...
Infineon's 200 V OptiMOS™ products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48 V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor...
Infineon's 250V OptiMOS™ products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. Summary...
Infineon's 40V and 60V product families feature not only the industry’s lowest R DS(on) but also a perfect switching behavior for fast switching applications. 15% lower R DS(on) and 31%...
N-Channel Small Signal MOSFET 20 V in SOT-23 package Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N- and P-Channel Small Signal MOSFETs that meet and exceed...
N-Channel Small Signal MOSFET 240 V in SOT-89 package Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N- and P-Channel Small Signal MOSFETs that meet and exceed...
OptiMOS™ 30V in S308 package Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 30V the best choice for the demanding requirements...
OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used...
OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are...
OptiMOS™ 5 power MOSFET 100 V in a PQFN 3x3 package Infineon’s OptiMOS™ 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in...
OptiMOS™ 5 power MOSFET 80V for telecom applications OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can...
OptiMOS™ 5 power MOSFETs logic level provide low RDS(on) in a small package Infineon's OptiMOS™ 5 power MOSFETs logic level are highly suitable for wireless charging, adapter and telecom...
OptiMOS™ 6 40 V power MOSFETs combining best-in-class RDS(on) with superior switching performance The OptiMOS™ 6 power MOSFET 40 V family is optimized for a variety of applications and...
OptiMOS™ 60 V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these...
OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). Summary of...
OptiMOS™ low-voltage power MOSFETs - perfectly addressing the needs of charger and adapter designs Infineon’s OptiMOS™ PD power MOSFET portfolio is targeting USB-PD and adapter applications. The products offer fast...
P-channel enhancement mode Field-Effect Transistor (FET), -60 V, SOT-23 Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N- and P-Channel Small Signal MOSFETs that meet and exceed...
P-channel enhancement mode Field-Effect Transistor (FET), -60 V, SOT-323 Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N- and P-Channel Small Signal MOSFETs that meet and exceed...
Radiation tolerant, 150V, 36A, N-channel MOSFET, PG-TO263, 30krad(Si)TID Features Optimized for LEO missions and constellations Radiation tolerant (LET of 46 MeV∙cm²/mg) Qualified for space applications according to AEC-Q101 standard Potential...
Radiation tolerant, 150V, 98A, N-channel MOSFET, PG-TO247, 30krad(Si)TID Features Optimized for LEO missions and constellations Radiation tolerant (LET of 46 MeV∙cm²/mg) Qualified for space applications according to AEC-Q101 standard Potential...
Radiation tolerant, 60V, 106A, N-channel MOSFET, PG-TO247, 30krad(Si) TID Summary of Features Optimized for LEO missions and constellations Radiation tolerant (LET of 46 MeV∙cm²/mg) Qualified according to AEC-Q101 standard Potential...
Radiation tolerant, 60V, 52A, N-channel MOSFET, PG-TO263, 30krad(Si) TID Summary of Features Optimized for LEO missions and constellations Radiation tolerant (LET of 46 MeV∙cm²/mg) Qualified according to AEC-Q101 standard Potential...
Summary of Features Optimized for LEO missions and constellations Radiation tolerant (LET of 46 MeV∙cm²/mg) Qualified for space applications according to AEC-Q101 standard Benefits Load switch Power conditioning unit Power...
The 150 V OptiMOS™ achieves a reduction in RDS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens...
The HybridPACKTM DSC S2 is a very compact half-bridge module targeting Hybrid- and Electric Vehicle applications. The module is based on Infineon’s long-term experience developing IGBT power modules and implements...
The power module implements the second generation CoolSiC™ Automotive MOSFET 1200 V, optimized for electric drive train applications, from mid- to high-range automotive power classes to high-range commercial, construction, and...
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in...
With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge,...
With the OptiMOS™ 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation. Summary of Features...
XHP™ 2 CoolSiC™ MOSFET halfbridge module 3.3 kV, 1.9 mΩ with .XT interconnection technology for decarbonizing transportation. Summary of Features CoolSiC™ MOSFET 3.3 kV Integrated body diode XHP™ 2 housing...
XHP™ 2 CoolSiC™ MOSFET halfbridge module 3.3 kV, 2.5 mΩ with .XT interconnection technology for decarbonizing transportation. Summary of Features CoolSiC™ MOSFET 3.3 kV Integrated body diode XHP™ 2 housing...
XHP™ 2 CoolSiC™ MOSFET halfbridge module 3.3 kV, 3.8 mΩ with .XT interconnection technology for decarbonizing transportation. Summary of Features CoolSiC™ MOSFET 3.3 kV Integrated body diode XHP™ 2 housing...

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