Manufacturer: Infineon Technologies
Win Source Part Number: 921241-IPA60R1K0CEXK
Series: CoolMOS™
Operating Temperature Range: -40°C ~ 150°C (TJ)
Features: N-Channel 600 V 6.8A (Tc) 26W (Tc) Through Hole PG-TO220-FP
Package: TO-220-3 Full Pack
Package: Tube
Mounting: Through Hole
Family Name: IPA60R1
Categories: Discrete Semiconductor Products
Case / Package: PG-TO220-FP
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 94 pct.
Supply and Demand Status: Balance
Quantity per package: 500
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 25 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
MOSFET N-CH 600V 6.8A TO220 Product overview: IPA60R1K0CEXKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 6.8A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 6.8A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPA60R1K0CEXKSA1
N-Channel 600V 6.8A (Tc) 26W (Tc) Through Hole PG-TO220-FP
MOSFET, N-CH, 650V, 6.8A, TO-220FP-3; Transistor Polarity:N Channel; Continuous Drain Current Id:6.8A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.86ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
MOSFET N-CH 600V 6.8A TO220
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 921241-IPA60R1K0CEXKSA1 | 278-IPA60R1K0CEXKSA1 | 2183001P | 448-IPA60R1K0CEXKSA1-ND | 49AC0273 | IPA60R1K0CEXKSA1 | IPA60R1K0CEXKSA1 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA60R1K0CEXKSA1 | 600V 6.8A TO220 MOSFET Transistor | MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 650V, 6.8A, To-220Fp-3; Transistor Polarity Infineon | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | ||||
| TJ | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | |||||
| Package Type | SOT3; PG-TO220-FP | Tube | TO-220; TO-220 | TO-220; TO-220-3 Full Pack | TO-3; TO-220 | TO-220; TO-220-3 Full Pack | |
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 600 volts |
