Manufacturer: Infineon Technologies
Win Source Part Number: 068956-IPA65R280E6
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 32W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO-220-FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 13.8A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 440μA
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 950pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 280 mOhm @ 4.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited
MOSFET N-Ch 700V 13.8A TO220FP-3 CoolMOS E6
| Win Source Electronics | VAST STOCK CO., LIMITED | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 068956-IPA65R280E6 | IPA65R280E6 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA65R280E6 | MOSFET |
| Polarity | N-Channel; N-Channel | |
| V(BR)DSS | 650 volts | |
| PD | 32000 milliwatts |