Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA65R280E6 IPA65R280E6

Description
Manufacturer: Infineon Technologies Win Source Part Number: 068956-IPA65R280E6 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 32W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO-220-FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 13.8A (Tc) Gate-Source Threshold Voltage: 3.5V @ 440μA Max Gate Charge: 45nC @ 10V Max Input Capacitance: 950pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 280 mOhm @ 4.4A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 068956-IPA65R280E6 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 32W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO-220-FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 13.8A (Tc) Gate-Source Threshold Voltage: 3.5V @ 440μA Max Gate Charge: 45nC @ 10V Max Input Capacitance: 950pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 280 mOhm @ 4.4A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA65R280E6 - 068956-IPA65R280E6 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA65R280E6
068956-IPA65R280E6
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA65R280E6 068956-IPA65R280E6
Manufacturer: Infineon Technologies Win Source Part Number: 068956-IPA65R280E6 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 32W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO-220-FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 13.8A (Tc) Gate-Source Threshold Voltage: 3.5V @ 440μA Max Gate Charge: 45nC @ 10V Max Input Capacitance: 950pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 280 mOhm @ 4.4A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 068956-IPA65R280E6
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 32W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO-220-FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 13.8A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 440μA
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 950pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 280 mOhm @ 4.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited

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Sheung Wan, Hong Kong
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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 068956-IPA65R280E6 IPA65R280E6
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA65R280E6 MOSFET
Polarity N-Channel; N-Channel
V(BR)DSS 650 volts
PD 32000 milliwatts
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