Manufacturer: Infineon Technologies
Win Source Part Number: 776841-IPB011N04NGAT
Series: OptiMOS
Packaging: Reel package
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-263-7, D2Pak (6 Leads + Tab)
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Family Name: IPB011N04NGATMA1
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: PG-TO263-7-3
Channel Type Type: N
Drain Source Voltage: 40V
Vgs(th) (Maximum) @ Id: 4V @ 200μA
Gate Charge (Qg) (Maximum) @ Vgs: 250nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 20000pF @ 20V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 250W (Tc)
Rds On (Maximum) @ Id, Vgs: 1.1 mOhm @ 100A, 10V
Alternative Parts (Cross-Reference): NVMFS5C430NLWFT3G; NTMFS5C430NLT3G; NVMFS5C430NLWFT1G; NVMFS5C430NLT3G;
Introduction Date: December 04, 2007
ECCN: EAR99
Country of Origin: Austria, Malaysia
Estimated EOL Date: 2027
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited
N-Channel 40V 180A (Tc) 250W (Tc) Surface Mount PG-TO263-7-3
N-Channel 40V 180A (Tc) 250W (Tc) Surface Mount PG-TO263-7-3
N-Channel 40V 180A (Tc) 250W (Tc) Surface Mount PG-TO263-7-3
MOSFET N-CH 40V 180A TO263-7
MOSFET, N CHANNEL, 40V, 180A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:180A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET N-CH 40V 180A TO263-7
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 776841-IPB011N04NGATMA1 | IPB011N04NGATMA1TR-ND | IPB011N04NGATMA1 | 60R2640 | IPB011N04NGATMA1 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB011N04NGATMA1 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Channel, 40V, 180A, To-263; Channel Type Infineon | Single FETs, MOSFETs |
| PD | 250000 milliwatts | 250000 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||
| Package Type | TO-263; SOT3 | TO-263; TO-263-7, D2PAK (6 Leads + Tab) | TO-263; TO-263-7, D2PAK (6 Leads + Tab) | TO-3; TO-263 | TO-263; TO-263-7, D²Pak (6 Leads + Tab) |
| Packing Method | Tape Reel; Reel package | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |
