MOSFET N-CH 80V 120A D2PAK Product overview: IPB031N08N5ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 120A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 120A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB031N08N5ATMA1
N-Channel 80V 120A (Tc) 167W (Tc) Surface Mount PG-TO263-3
N-Channel 80V 120A (Tc) 167W (Tc) Surface Mount PG-TO263-3
N-Channel 80V 120A (Tc) 167W (Tc) Surface Mount PG-TO263-3
Manufacturer: Infineon Technologies
Win Source Part Number: 874686-IPB031N08N5AT
Series: OptiMOS™
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: N-Channel 80 V 120A (Tc) 167W (Tc) Surface Mount PG-TO263-3
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Package: Reel - TR
Mounting: Surface Mount
Family Name: IPB031
Categories: Discrete Semiconductor Products
Case / Package: PG-TO263-3
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited
Quantity per package: 1000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: IPB031N08N5ATMA1CT, IPB031N08N5ATMA1-ND,
MOSFET, N-CH, 80V, 120A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0027ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
MOSFET N-CH 80V 120A D2PAK
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | RS Components, Ltd. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IPB031N08N5ATMA1 | IPB031N08N5ATMA1TR-ND | 874686-IPB031N08N5ATMA1 | 2207377 | IPB031N08N5ATMA1 | 13AC9025 | IPB031N08N5ATMA1 |
| Product Name | 80V 120A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB031N08N5ATMA1 | MOSFETs | MOSFET | Mosfet, N-Ch, 80V, 120A, To-263; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 80 volts | ||||||
| Transconductance | 0.0760 kS | ||||||
| PD | 167 milliwatts |
