Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA60R125CP IPA60R125CP

Manufacturer: Infineon Technologies
Win Source Part Number: 068940-IPA60R125CP
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 35W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO-220-FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 25A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 1.1mA
Max Gate Charge: 70nC @ 10V
Max Input Capacitance: 2500pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 125 mOhm @ 16A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited

MOSFETs N-Ch 650V 25A TO220FP-3 CoolMOS CP Product overview: IPA60R125CP from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 25A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 25A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPA60R125CP can be used for catalog matching and distributor lookup.