The IPB042N10N3G is an N-channel MOSFET designed for high-frequency switching and synchronous rectification, with a 100 V drain-source breakdown voltage and a maximum on-state resistance of 4.2 mΩ. It is packaged in a PG-TO 263-3 (D²PAK) case, supports a continuous drain current of 137 A at 175 °C junction temperature, and is RoHS compliant and halogen-free according to IEC 61249-2-21. The device is qualified according to JEDEC standards J-STD-20 and JESD22.
MOSFET N-Ch 100V 100A D2PAK-2
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPB042N10N3 G E8187 |
| Product Name | MOSFET |
