Infineon Technologies AG 80V 100A MOSFET Transistor IPB035N08N3 G

MOSFETs N-Ch 80V 100A D2PAK-2 OptiMOS 3 Product overview: IPB035N08N3 G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 100A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPB035N08N3 G can be used for catalog matching and distributor lookup.

Manufacturer: Infineon Technologies
Win Source Part Number: 776843-IPB035N08N3 G
Series: OptiMOS
Packaging: Reel package
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Manufacturer Package: PG-TO263-2
Channel Type Type: N
Drain Source Voltage: 80V
Vgs(th) (Maximum) @ Id: 3.5V @ 155μA
Gate Charge (Qg) (Maximum) @ Vgs: 117nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 8110pF @ 40V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 214W (Tc)
Rds On (Maximum) @ Id, Vgs: 3.5 mOhm @ 100A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited