MOSFETs N-Ch 650V 4.4A TO220FP-3 CoolMOS C6 Product overview: IPA60R950C6 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 4.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 4.4A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPA60R950C6 can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 068955-IPA60R950C6
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 26W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO-220-FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 4.4A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 130μA
Max Gate Charge: 13nC @ 10V
Max Input Capacitance: 280pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 950 mOhm @ 1.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited
MOSFET N-Ch 650V 4.4A TO220FP-3 CoolMOS C6
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2088-IPA60R950C6 | 068955-IPA60R950C6 | IPA60R950C6 |
| Product Name | 650V 4.4A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA60R950C6 | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | |
| MOSFET Operating Mode | Enhancement | ||
| PD | 26 milliwatts | 26000 milliwatts | |
| Package Type | Tube | TO-220; SOT3; PG-TO-220-FP |