Infineon Technologies AG 600V 31A TO220 MOSFET Transistor IPA60R099P7XKSA1

Description
MOSFET N-CH 600V 31A TO220 Product overview: IPA60R099P7XKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 31A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 31A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPA60R099P7XKSA1 can be used for catalog matching and distributor lookup.
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Description
MOSFET N-CH 600V 31A TO220 Product overview: IPA60R099P7XKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 31A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 31A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPA60R099P7XKSA1 can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Singapore, Singapore
600V 31A TO220 MOSFET Transistor
278-IPA60R099P7XKSA1
600V 31A TO220 MOSFET Transistor 278-IPA60R099P7XKSA1
MOSFET N-CH 600V 31A TO220 Product overview: IPA60R099P7XKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 31A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 31A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPA60R099P7XKSA1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 600V 31A TO220 Product overview: IPA60R099P7XKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 31A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 31A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPA60R099P7XKSA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IPA60R099P7XKSA1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPA60R099P7XKSA1-ND
Single FETs, MOSFETs IPA60R099P7XKSA1-ND
N-Channel 600V 31A (Tc) 29W (Tc) Through Hole PG-TO220-FP

N-Channel 600V 31A (Tc) 29W (Tc) Through Hole PG-TO220-FP

Buy Now Datasheet
FETs - Single - IPA60R099P7XKSA1 - 807103-IPA60R099P7XKSA1 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IPA60R099P7XKSA1
807103-IPA60R099P7XKSA1
FETs - Single - IPA60R099P7XKSA1 807103-IPA60R099P7XKSA1
Manufacturer: Infineon Technologies Win Source Part Number: 807103-IPA60R099P7XK SA1 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600V Supplier Device Package: PG-TO220 Full Pack Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-220-3 Full Pack Power Dissipation (Maximum): 29W (Tc) Popularity: Medium Fake Threat In the Open Market: 82 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 99mOhm at 10.5A, 10V Gate Charge (Qg) (Maximum) at Vgs: 45nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 1952pF at 400V Current - Continuous Drain (Id) at 25°C: 31A (Tc) Vgs(th) (Maximum) at Id: 4V at 530μA Maximum Vgs: ±20V

Manufacturer: Infineon Technologies
Win Source Part Number: 807103-IPA60R099P7XKSA1
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600V
Supplier Device Package: PG-TO220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-220-3 Full Pack
Power Dissipation (Maximum): 29W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 82 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 99mOhm at 10.5A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 45nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 1952pF at 400V
Current - Continuous Drain (Id) at 25°C: 31A (Tc)
Vgs(th) (Maximum) at Id: 4V at 530μA
Maximum Vgs: ±20V

Buy Now
Mosfet, N-Ch, 600V, 31A, 29W, To-220Fp; Transistor Polarity Infineon - 93AC7089 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 31A, 29W, To-220Fp; Transistor Polarity Infineon
93AC7089
Mosfet, N-Ch, 600V, 31A, 29W, To-220Fp; Transistor Polarity Infineon 93AC7089
MOSFET, N-CH, 600V, 31A, 29W, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.077ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power RoHS Compliant: Yes

MOSFET, N-CH, 600V, 31A, 29W, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.077ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPA60R099P7XKSA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPA60R099P7XKSA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPA60R099P7XKSA1
MOSFET N-CH 600V 31A TO220

MOSFET N-CH 600V 31A TO220

Supplier's Site
MOSFET HIGH POWER_NEW

MOSFET HIGH POWER_NEW

Buy Now Datasheet
Single FETs, MOSFETs - IPA60R099P7XKSA1 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IPA60R099P7XKSA1
Single FETs, MOSFETs IPA60R099P7XKSA1
MOSFET N-CH 600V 31A TO220

MOSFET N-CH 600V 31A TO220

Supplier's Site Datasheet

Technical Specifications

  ERSAELECTRONICS PTE. LTD. DigiKey Win Source Electronics Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 278-IPA60R099P7XKSA1 IPA60R099P7XKSA1-ND 807103-IPA60R099P7XKSA1 93AC7089 IPA60R099P7XKSA1 IPA60R099P7XKSA1 IPA60R099P7XKSA1
Product Name 600V 31A TO220 MOSFET Transistor Single FETs, MOSFETs FETs - Single - IPA60R099P7XKSA1 Mosfet, N-Ch, 600V, 31A, 29W, To-220Fp; Transistor Polarity Infineon Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Single FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel N-Channel; N-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS 600 volts 600 volts
PD 29 milliwatts 29000 milliwatts 29000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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