MOSFET N-CH 600V 31A TO220 Product overview: IPA60R099P7XKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 31A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 31A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPA60R099P7XKSA1
N-Channel 600V 31A (Tc) 29W (Tc) Through Hole PG-TO220-FP
Manufacturer: Infineon Technologies
Win Source Part Number: 807103-IPA60R099P7XK
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600V
Supplier Device Package: PG-TO220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-220-3 Full Pack
Power Dissipation (Maximum): 29W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 82 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 99mOhm at 10.5A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 45nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 1952pF at 400V
Current - Continuous Drain (Id) at 25°C: 31A (Tc)
Vgs(th) (Maximum) at Id: 4V at 530μA
Maximum Vgs: ±20V
MOSFET, N-CH, 600V, 31A, 29W, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.077ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power RoHS Compliant: Yes
MOSFET N-CH 600V 31A TO220
MOSFET N-CH 600V 31A TO220
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IPA60R099P7XKSA1 | IPA60R099P7XKSA1-ND | 807103-IPA60R099P7XKSA1 | 93AC7089 | IPA60R099P7XKSA1 | IPA60R099P7XKSA1 | IPA60R099P7XKSA1 |
| Product Name | 600V 31A TO220 MOSFET Transistor | Single FETs, MOSFETs | FETs - Single - IPA60R099P7XKSA1 | Mosfet, N-Ch, 600V, 31A, 29W, To-220Fp; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 600 volts | 600 volts | |||||
| PD | 29 milliwatts | 29000 milliwatts | 29000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |