Win Source Part Number: 1028123-IPA65R280E6X
Category: Discrete Semiconductor Products>Transistors
Series: CoolMOS™
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Power Dissipation (Max): 32W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: PG-TO220-FP
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): IPP65R190CFDXKSA1; IPP65R225C7XKSA1; IPP65R310CFDXKSA1; FCP260N60E; STP18N65M5; STP20NM65NIPA65R280E
ECCN: EAR99
Fake Threat In the Open Market: 82 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: 2156-IPA65R280E6XKSA
Base Product Number: IPA65R280
Product Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 650V 13.8A TO220-FP Product overview: IPA65R280E6XKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 13.8A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 13.8A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPA65R280E6XKSA1
N-Channel 650V 13.8A (Tc) 32W (Tc) Through Hole PG-TO220-FP
MOSFET, N CHANNEL, 650V, 13.8A, TO220; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:13.8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes
MOSFET N-CH 650V 13.8A TO220-FP
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1028123-IPA65R280E6XKSA1 | 278-IPA65R280E6XKSA1 | IPA65R280E6XKSA1-ND | 47W3460 | IPA65R280E6XKSA1 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | 650V 13.8A TO220 MOSFET Transistor | Single FETs, MOSFETs | Mosfet, N Channel, 650V, 13.8A, To220; Channel Type Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | ||
| PD | 32000 milliwatts | 32000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | SOT3 | Tube | TO-220; TO-220-3 Full Pack | TO-3 | TO-220; TO-220-3 Full Pack |