Infineon Technologies AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IPA65R280E6XKSA1

Description
Win Source Part Number: 1028123-IPA65R280E6X KSA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: CoolMOS™ Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V Vgs(th) (Max) @ Id: 3.5V @ 440µA Power Dissipation (Max): 32W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: PG-TO220-FP Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): IPP65R190CFDXKSA1; IPP65R225C7XKSA1; IPP65R310CFDXKSA1; FCP260N60E; STP18N65M5; STP20NM65NIPA65R280E 6; SP000795276; ECCN: EAR99 Fake Threat In the Open Market: 82 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: 2156-IPA65R280E6XKSA 1,ROCINFIPA65R280E6X KSA1,SP000795276,IPA 65R280E6,IPA65R280E6 -ND Base Product Number: IPA65R280 Product Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V
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Description
Win Source Part Number: 1028123-IPA65R280E6X KSA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: CoolMOS™ Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V Vgs(th) (Max) @ Id: 3.5V @ 440µA Power Dissipation (Max): 32W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: PG-TO220-FP Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): IPP65R190CFDXKSA1; IPP65R225C7XKSA1; IPP65R310CFDXKSA1; FCP260N60E; STP18N65M5; STP20NM65NIPA65R280E 6; SP000795276; ECCN: EAR99 Fake Threat In the Open Market: 82 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: 2156-IPA65R280E6XKSA 1,ROCINFIPA65R280E6X KSA1,SP000795276,IPA 65R280E6,IPA65R280E6 -ND Base Product Number: IPA65R280 Product Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1028123-IPA65R280E6XKSA1 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1028123-IPA65R280E6XKSA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1028123-IPA65R280E6XKSA1
Win Source Part Number: 1028123-IPA65R280E6X KSA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: CoolMOS™ Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V Vgs(th) (Max) @ Id: 3.5V @ 440µA Power Dissipation (Max): 32W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: PG-TO220-FP Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): IPP65R190CFDXKSA1; IPP65R225C7XKSA1; IPP65R310CFDXKSA1; FCP260N60E; STP18N65M5; STP20NM65NIPA65R280E 6; SP000795276; ECCN: EAR99 Fake Threat In the Open Market: 82 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: 2156-IPA65R280E6XKSA 1,ROCINFIPA65R280E6X KSA1,SP000795276,IPA 65R280E6,IPA65R280E6 -ND Base Product Number: IPA65R280 Product Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1028123-IPA65R280E6XKSA1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: CoolMOS™
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Power Dissipation (Max): 32W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: PG-TO220-FP
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): IPP65R190CFDXKSA1; IPP65R225C7XKSA1; IPP65R310CFDXKSA1; FCP260N60E; STP18N65M5; STP20NM65NIPA65R280E6; SP000795276;
ECCN: EAR99
Fake Threat In the Open Market: 82 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: 2156-IPA65R280E6XKSA1,ROCINFIPA65R280E6XKSA1,SP000795276,IPA65R280E6,IPA65R280E6-ND
Base Product Number: IPA65R280
Product Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Singapore, Singapore
650V 13.8A TO220 MOSFET Transistor
278-IPA65R280E6XKSA1
650V 13.8A TO220 MOSFET Transistor 278-IPA65R280E6XKSA1
MOSFET N-CH 650V 13.8A TO220-FP Product overview: IPA65R280E6XKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 13.8A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 13.8A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPA65R280E6XKSA1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 650V 13.8A TO220-FP Product overview: IPA65R280E6XKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 13.8A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 13.8A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPA65R280E6XKSA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IPA65R280E6XKSA1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPA65R280E6XKSA1-ND
Single FETs, MOSFETs IPA65R280E6XKSA1-ND
N-Channel 650V 13.8A (Tc) 32W (Tc) Through Hole PG-TO220-FP

N-Channel 650V 13.8A (Tc) 32W (Tc) Through Hole PG-TO220-FP

Buy Now Datasheet
Mosfet, N Channel, 650V, 13.8A, To220; Channel Type Infineon - 47W3460 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 650V, 13.8A, To220; Channel Type Infineon
47W3460
Mosfet, N Channel, 650V, 13.8A, To220; Channel Type Infineon 47W3460
MOSFET, N CHANNEL, 650V, 13.8A, TO220; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:13.8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes

MOSFET, N CHANNEL, 650V, 13.8A, TO220; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:13.8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPA65R280E6XKSA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPA65R280E6XKSA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPA65R280E6XKSA1
MOSFET N-CH 650V 13.8A TO220-FP

MOSFET N-CH 650V 13.8A TO220-FP

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1028123-IPA65R280E6XKSA1 278-IPA65R280E6XKSA1 IPA65R280E6XKSA1-ND 47W3460 IPA65R280E6XKSA1
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 650V 13.8A TO220 MOSFET Transistor Single FETs, MOSFETs Mosfet, N Channel, 650V, 13.8A, To220; Channel Type Infineon Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel
PD 32000 milliwatts 32000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3 Tube TO-220; TO-220-3 Full Pack TO-3 TO-220; TO-220-3 Full Pack
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