N-channel MOSFET for switching applications in a D2PAK-6 package, rated for a drain-source voltage of 60 V, continuous drain current of 180 A at 25 °C, and drain-source on-resistance of 1.7 mΩ at 10 V gate-source voltage. The device is qualified according to AEC Q101 and features a reverse recovery time of 34 ns with a gate charge of 170 nC. The operating and storage temperature range is -55 °C to +175 °C.
MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPB017N06N3GXT |
| Product Name | MOSFET |
