MOSFET N-CH 600V 10.6A TO220-FP Product overview: IPA60R380E6XKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 10.6A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 10.6A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPA60R380E6XKSA1
N-Channel 600V 10.6A (Tc) 31W (Tc) Through Hole PG-TO220-FP
Manufacturer: Infineon Technologies
Win Source Part Number: 068950-IPA60R380E6XK
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 31W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO-220-FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 10.6A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 320μA
Max Gate Charge: 32nC @ 10V
Max Input Capacitance: 700pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 380 mOhm @ 3.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited
MOSFET, N-CH, 600V, 10.6A, TO-220FP-3; Transistor Polarity:N Channel; Continuous Drain Current Id:10.6A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.34ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
MOSFET N-CH 600V 10.6A TO220-FP
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IPA60R380E6XKSA1 | IPA60R380E6XKSA1-ND | 068950-IPA60R380E6XKSA1 | 13AC9013 | IPA60R380E6XKSA1 |
| Product Name | 600V 10.6A TO220 MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA60R380E6XKSA1 | Mosfet, N-Ch, 600V, 10.6A, To-220Fp-3; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | ||||
| V(BR)DSS | 650 volts | 600 volts | |||
| PD | 31000 milliwatts | 31000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | Tube | TO-220; TO-220-3 Full Pack | TO-220; SOT3; PG-TO-220-FP | TO-3; TO-220 | TO-220; TO-220-3 Full Pack |