Infineon Technologies AG Datasheets for Metal-Oxide Semiconductor FET (MOSFET)
Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts.
Metal-Oxide Semiconductor FET (MOSFET): Learn more
| Product Name | Notes |
|---|---|
| 100V OptiMOS™ 5 power MOSFET in TOLL Infineon’s OptiMOS™ power MOSFET in TO-Leadless package is optimized for high current applications up to 300 A, such as forklifts, light electric vehicles... | |
| 600 V CoolMOS™ 8 power transistor The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7, C7... | |
| 600 V CoolMOS™ S7T SJ MOSFET with integrated temperature sensor in Q-DPAK BSC (PG-HDSOP-22) for an increased junction temperature sensing accuracy The CoolMOS™ S7T with embedded temperature sensor increases junction... | |
| 600 V CoolMOS™ S7T SJ MOSFET with integrated temperature sensor in TOLL (PG-HSOF-8) for an increased junction temperature sensing accuracy The CoolMOS™ S7T with embedded temperature sensor increases junction temperature... | |
| 600 V CoolMOS™ S7TA SJ MOSFET with integrated temperature sensor in Q-DPAK BSC (PG-HDSOP-22) for an increased junction temperature sensing accuracy The CoolMOS™ S7TA with embedded temperature sensor increases junction... | |
| 600 V CoolMOS™ S7TA SJ MOSFET with integrated temperature sensor in QDAPK BSC (PG-HDSOP-22) for an increased junction temperature sensing accuracy The CoolMOS™ S7TA with embedded temperature sensor increases junction... | |
| 650 V CoolMOS™ CFD7A N-channel automotive SJ power MOSFET in in HDSOP-22 bottom-side cooling The 125mΩ IPQC65R125CFD7A in QDPAK bottom side cooling SMD package is part of the automotive-qualified 650... | |
| 650 V CoolMOS™ CFD7A N-channel automotive SJ power MOSFET in in HDSOP-22 bottom-side cooling The 17mΩ IPQC65R017CFD7A in QDPAK bottom side cooling SMD package is part of the automotive-qualified 650... | |
| 650 V CoolMOS™ CFD7A N-channel automotive SJ power MOSFET in in HDSOP-22 bottom-side cooling The 40mΩ IPQC65R040CFD7A in QDPAK bottom side cooling SMD package is part of the automotive-qualified 650... | |
| 650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs. In addition to the well-known attributes of high quality and... | |
| 650V CoolMOS™ N-channel automotive SJ power MOSFET CFD7A The 190mOhm IPP65R190CFD7A in TO-220 package is part of the automotive-qualified 650V CoolMOS™ SJ power MOSFET CFD7A product family. As compared to... | |
| A new SMD package using Kelvin source concept For the first time the CoolMOS™ C7 Gold superjunction MOSFET series (G7) brings together the benefits of the improved 600V CoolMOS™ C7... | |
| A new SMD package using Kelvin source concept The CoolMOS™ C7 Gold superjunction MOSFET series (G7) for the first time brings together the benefits of the improved 650V CoolMOS™ C7... | |
| CoolMOS™ CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600 V,... | |
| Designers who used this product also designed with BSC093N15NS5 | N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant BSS127 | Small signal/small power MOSFET IDH06G65C6 | CoolSiC™ Schottky Diodes ICE3PCS01G... | |
| For new design activities find out more on IPTC014N10NM5! OptiMOS™ 5 power MOSFET in TOLT for excellent thermal performance IPTC015N10NM5 is part of OptiMOS™ 5 power MOSFET in TOLT: the... | |
| Industry leading power MOSFET technology for telecom power supply and low voltage drives with OptiMOS™ 5 80V in TO-Leadless (TOLL) package Infineon’s OptiMOS™ 5 80V n-channel power MOSFET IPT019N08N5 in... | |
| Infineon’s answer for flyback topologies up to 75W Developed to serve today’s and especially tomorrow’s trends in flyback topologies – the new 700V CoolMOS™ P7 superjunction MOSFET series addresses the... | |
| Infineon’s answer to resonant high power topologies The 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ | |
| Infineon’s answer to resonant high power topologies The 600V CoolMOS™ CFD7 is Infineon’s latest high-voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7... | |
| Infineon’s answer to resonant high-power topologies The 600V CoolMOS™ CFD7 is Infineon’s latest high-voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes... | |
| Infineon’s best price performance 600V CoolMOS™ S7 Superjunction MOSFET for low frequency switching applications in TO-Leadless (TOLL) package Infineon’s 600V CoolMOS™ S7 Superjunction MOSFET (IPT60R022S7) in TO-Leadless (Pb-free) package comes... | |
| Infineon’s best price performance 600V CoolMOS™ S7 Superjunction MOSFET for low frequency switching applications in TO-Leadless (TOLL) package Infineon’s 600V CoolMOS™ S7 Superjunction MOSFET (IPT60R040S7) in TO-Leadless (Pb-free) package features... | |
| Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over... | |
| Infineon’s lowest RDS(on)* A SJ MOSFET in the novel bottom-side-cooled QDPAK package, ideal for low-frequency switching automotive applications. The automotive qualified AEC-Q101, 600 V CoolMOS™ S7A SJ MOSFET... | |
| Infineon’s lowest RDS(on)* A SJ MOSFET in the novel bottom-side-cooled QDPAK package, ideal for low-frequency switching automotive applications The automotive qualified AEC-Q101, 600 V CoolMOS™ S7A SJ MOSFET... | |
| Infineon's 600 V SJ MOSFET in bottom-side cooled package minimizes conduction losses and enables standardized cooling and mounting of the device The 600 V CoolMOS™ S7 SJ MOSFET family is... | |
| Infineon's TO-Leadless package is optimized for high current applications such as forklift, light electric vehicles (LEV), POL (point-of-load) and telecom. This package is a perfect solution for high power applications... | |
| IPT034N15NM6 OptiMOS™ 6 150 V in normal level is setting a new level of performance within the highly competitive 150 V market. OptiMOS™ 6 150 V technology was designed to... | |
| IPT047N15NM6 OptiMOS™ 6 150 V in normal level is setting a new level of performance within the highly competitive 150 V market. OptiMOS™ 6 150 V technology was designed to... | |
| IPT60R016CM8 – 600 V CoolMOS™ 8 power transistor The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7,... | |
| IPT60R037CM8 – 600 V CoolMOS™ 8 power transistor The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7,... | |
| IPT60R180CM8 600 V CoolMOS™ 8 power transistor The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7,... | |
| IPTA60R180CM8 600 V CoolMOS™ 8 power transistor The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7,... | |
| Optimized power MOSFETs merging high energy efficiency with ease-of-use The 600V CoolMOS™ P7 is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high... | |
| OptiMOS™ 5 100V power MOSFET in TO-Leadless (TOLL) package with 60% space reduction for telecom and low voltage drives applications Infineon’s OptiMOS™ 5 100V n-channel power MOSFET IPT026N10N5 in TO-Leadless... | |
| OptiMOS™ 5 100V power MOSFET in TO-Leadless (TOLL) package with 60% space reduction for telecom and low voltage drives applications OptiMOS™ 5 100V industrial power MOSFET IPT020N10N5 in TO-Leadless from... | |
| OptiMOS™ 5 N-channel power MOSFET 60 V 0.9 mΩ in TOLL package Infineon's TO-Leadless package is optimized for high current applications such as forklift, light electric vehicles (LEV), point-of-load (POL)... | |
| OptiMOS™ 5 power MOSFET 150 V 3.9 mOhm in TOLL Infineon’s OptiMOS™ power MOSFET in TO-Leadless package is optimized for high current applications, such as forklifts, light electric vehicles (LEV),... | |
| OptiMOS™ 5 power MOSFET 150 V 4.4 mOhm in TOLL Infineon’s OptiMOS™ power MOSFET in TO-Leadless package is optimized for high-current applications, such as forklifts, light electric vehicles (LEV), power... | |
| OptiMOS™ 5 power MOSFET 150 V 5.4 mOhm in TOLL Infineon’s OptiMOS™ power MOSFET in TO-Leadless package is optimized for high-current applications, such as forklifts, light electric vehicles (LEV), power... | |
| OptiMOS™ 5 power MOSFET 150 V 6.3 mOhm in TOLL Infineon’s OptiMOS™ power MOSFET in TO-Leadless package is optimized for high-current applications, such as forklifts, light electric vehicles (LEV), power... | |
| OptiMOS™ 5 power MOSFET 60 V in TOLT for excellent thermal performance IPTC012N06NM5 is part of the OptiMOS™ 5 power MOSFET in TOLT family: the TO-Leaded top-side cooling package for... | |
| OptiMOS™ 5 power MOSFET 80V in TOLL package Infineon’s OptiMOS™ power MOSFET in TO-Leadless package is optimized for high current applications up to 300 A, such as forklifts, light electric... | |
| OptiMOS™ 5 power MOSFET in TOLT for excellent thermal performance IPTC011N08NM5 is part of the OptiMOS™ 5 power MOSFET in TOLT family: the TO-Leaded top-side cooling package for superior thermal... | |
| OptiMOS™ 5 power MOSFET in TOLT for excellent thermal performance IPTC014N08NM5 is part of OptiMOS™ 5 power MOSFET in TOLT: the TO-Leaded top side-cooling package for superior thermal performance. This... | |
| OptiMOS™ 5 power MOSFET in TOLT for excellent thermal performance IPTC014N10NM5 is part of the OptiMOS™ 5 power MOSFET in TOLT family: the TO-Leaded top-side cooling package for superior thermal... | |
| OptiMOS™ 5 Single N-channel Linear FET 2 100 V, 1.7 mΩ, 321 A in TOLL package IPT017N10NM5LF2 is Infineon’s best-in-class OptiMOS™ 5 Linear FET 2 100 V in TO-Leadless (TOLL),... | |
| OptiMOS™ 5 single N-channel Linear FET 2 100 V, 1.7 mΩ, 351 A in TOLT package IPTC017N10NM5LF2 is Infineon’s best-in-class OptiMOS™ 5 Linear FET 2 100 V in the TO-Leaded... | |
| OptiMOS™ 5 Single N-channel Linear FET 2 100 V, 2.3 mΩ, 243 A in TOLL package The OptiMOS™ 5 Linear FET 2 technology enables the best-in-class trade-off between on-state resistance... | |
| OptiMOS™ 5 Single N-Channel Linear FET 60V, 0.8mΩ, 450A in TOLL package IPT008N06NM5LF is Infineon’s best-in-class OptiMOS™ 5 linear FET 60V in a TO-Leadless (TOLL) package, offering the industry’s lowest... | |
| OptiMOS™ 5 Single N-Channel Linear FET 80V, 1.3mΩ, 330A in TOLL package IPT013N08NM5LF is Infineon’s best-in-class OptiMOS™ 5 linear FET 80V in a TO-Leadless (TOLL) package, offering the industry’s lowest... | |
| OptiMOS™ 6 power MOSFET 135 V Normal Level in TOLL This product effectively bridges the gap between the 120 V and 150 V MOSFETs. In TOLL, OptiMOS™ 6 135 V... | |
| OptiMOS™ 6 power MOSFET 150 V normal level in TOLL package IPT025N15NM6 OptiMOS™ 6 150 V in normal level is setting a new level of performance within the highly competitive... | |
| OptiMOS™ 6 power MOSFET 200 V normal level in TO-Leadless package IPT067N20NM6 OptiMOS™ 6 200 V is setting the new technology standard. It addresses the need for high power density,... | |
| OptiMOS™ 6 power MOSFET 200 V normal level in TO-Leadless package IPT129N20NM6 OptiMOS™ 6 200 V is setting the new technology standard. It addresses the need for high power density,... | |
| OptiMOS™ 6 power MOSFET normal level 120 V in TOLL package This is a normal level 120 V MOSFET in TO-Leadless packaging with 2.6 mOhm on-resistance. Compared to OptiMOS™ 3,... | |
| OptiMOS™ 6 power MOSFET normal level 120 V in TOLT package This is a normal level 120 V MOSFET in TO-Leaded top-side cooling (TOLT) packaging with 1.7 mOhm on-resistance. IPTC017N12NM6... | |
| OptiMOS™ power MOSFET 120 V in TOLL package The IPT030N12N3 G is the ideal fit for battery-powered equipment, with optimal balance between additional voltage breakdown margin and low on-state resistance... | |
| Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7 650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2... | |
| Single N-Channel OptiMOS™ 5 power MOSFET 80V 1.05mΩ 425A in a TOLL package IPT010N08NM5 is Infineon’s best-in-class 80V power MOSFET in a TO-Leadless (TOLL) package, offering the industry’s lowest on-state... | |
| StrongIRFET™ 2 single N-channel power MOSFET 100 V in TOLL package Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 1.7 mOhm, addressing a broad range of... | |
| Summary of Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • | |
| The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPT65R040CFD7 in... | |
| The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPT65R060CFD7 in... | |
| The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPT65R080CFD7 in... | |
| The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPT65R099CFD7 in... | |
| The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPT65R125CFD7 in... | |
| The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPT65R155CFD7 in... | |
| The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPT65R190CFD7 in... | |
| The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650V CoolMOS™ CFD7 superjunction MOSFET IPP65R041CFD7 in a TO-220... | |
| The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650V CoolMOS™ CFD7 superjunction MOSFET IPP65R060CFD7 in a TO-220... | |
| The IPT014N08NM5 is Infineon’s OptiMOS™ power MOSFET 1.4 mOhm, 80 V in a TO-Leadless (TOLL) package with a high current capability of 331 A (ID @25 ˚C). Infineon’s OptiMOS™ |
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