Infineon Technologies AG 150V 130A MOSFET Transistor IPB065N15N3GE8187ATMA1

Description
MOSFET N-CH 150V 130A TO263-7 Product overview: IPB065N15N3GE8187ATM A1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 130A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 130A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB065N15N3GE818 7ATMA1 can be used for catalog matching and distributor lookup.
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB065N15N3GE8187ATMA1 - 1045766-IPB065N15N3GE8187ATMA1 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IPB065N15N3GE8187ATMA1TR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPB065N15N3GE8187ATMA1 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
MOSFET N-CH 150V 130A TO263-7 Product overview: IPB065N15N3GE8187ATM A1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 130A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 130A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB065N15N3GE818 7ATMA1 can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
ERSAELECTRONICS PTE. LTD.
Singapore
150V 130A MOSFET Transistor
278-IPB065N15N3GE8187ATMA1
150V 130A MOSFET Transistor 278-IPB065N15N3GE8187ATMA1
MOSFET N-CH 150V 130A TO263-7 Product overview: IPB065N15N3GE8187ATM A1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 130A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 130A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB065N15N3GE818 7ATMA1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 150V 130A TO263-7 Product overview: IPB065N15N3GE8187ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 130A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 130A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB065N15N3GE8187ATMA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB065N15N3GE8187ATMA1 - 1045766-IPB065N15N3GE8187ATMA1 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB065N15N3GE8187ATMA1
1045766-IPB065N15N3GE8187ATMA1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB065N15N3GE8187ATMA1 1045766-IPB065N15N3GE8187ATMA1
Manufacturer: Infineon Technologies Win Source Part Number: 1045766-IPB065N15N3G E8187ATMA1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO263-7 Dimension: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 130A (Tc) Gate-Source Threshold Voltage: 4V @ 270μA Max Gate Charge: 93nC @ 10V Max Input Capacitance: 7300pF @ 75V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.5 mOhm @ 100A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 1045766-IPB065N15N3GE8187ATMA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO263-7
Dimension: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 130A (Tc)
Gate-Source Threshold Voltage: 4V @ 270μA
Max Gate Charge: 93nC @ 10V
Max Input Capacitance: 7300pF @ 75V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.5 mOhm @ 100A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - IPB065N15N3GE8187ATMA1TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPB065N15N3GE8187ATMA1TR-ND
Single FETs, MOSFETs IPB065N15N3GE8187ATMA1TR-ND
N-Channel 150V 130A (Tc) 300W (Tc) Surface Mount PG-TO263-7

N-Channel 150V 130A (Tc) 300W (Tc) Surface Mount PG-TO263-7

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPB065N15N3GE8187ATMA1 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPB065N15N3GE8187ATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPB065N15N3GE8187ATMA1
MOSFET N-CH 150V 130A TO263-7

MOSFET N-CH 150V 130A TO263-7

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 278-IPB065N15N3GE8187ATMA1 1045766-IPB065N15N3GE8187ATMA1 IPB065N15N3GE8187ATMA1TR-ND IPB065N15N3GE8187ATMA1
Product Name 150V 130A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB065N15N3GE8187ATMA1 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PD 300000 milliwatts 300000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type Tape & Reel (TR) TO-263; SOT3; PG-TO263-7 TO-263; TO-263-7, D2PAK (6 Leads + Tab) TO-263; TO-263-7, D2PAK (6 Leads + Tab)
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