Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB065N15N3GE8187ATMA1 IPB065N15N3GE8187ATMA1

Manufacturer: Infineon Technologies
Win Source Part Number: 1045766-IPB065N15N3GE8187ATMA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO263-7
Dimension: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 130A (Tc)
Gate-Source Threshold Voltage: 4V @ 270μA
Max Gate Charge: 93nC @ 10V
Max Input Capacitance: 7300pF @ 75V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.5 mOhm @ 100A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Sufficient

N-Channel 150V 130A (Tc) 300W (Tc) Surface Mount PG-TO263-7

MOSFET N-CH 150V 130A TO263-7 Product overview: IPB065N15N3GE8187ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 130A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 130A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB065N15N3GE8187ATMA1 can be used for catalog matching and distributor lookup.