Infineon Technologies AG Datasheets for Metal-Oxide Semiconductor FET (MOSFET)
Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts.
Metal-Oxide Semiconductor FET (MOSFET): Learn more
| Product Name | Notes |
|---|---|
| 500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all... | |
| 600 V CoolMOS™ 8 power transistor The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7, C7... | |
| 600 V CoolMOS™ S7T SJ MOSFET with integrated temperature sensor in Q-DPAK TSC (PG-HDSOP-22) for an increased junction temperature sensing accuracy The CoolMOS™ S7T with embedded temperature sensor increases junction... | |
| 600 V CoolMOS™ S7TA SJ MOSFET with integrated temperature sensor in Q-DPAK TSC (PG-HDSOP-22) for an increased junction temperature sensing accuracy The CoolMOS™ S7TA with embedded temperature sensor increases junction... | |
| 600V CoolMOS™ PFD7 superjunction MOSFET in TO-252 DPAK package The 600V CoolMOS™ PFD7 superjunction MOSFET (IPD60R1K0PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPD60R1K0PFD7S in a TO-252 DPAK... | |
| 600V CoolMOS™ PFD7 superjunction MOSFET in TO-252 DPAK package The 600V CoolMOS™ PFD7 superjunction MOSFET (IPD60R1K5PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPD60R1K5PFD7S in a TO-252 DPAK... | |
| 600V CoolMOS™ PFD7 superjunction MOSFET in TO-252 DPAK package The 600V CoolMOS™ PFD7 superjunction MOSFET (IPD60R210PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPD60R210PFD7S in a TO-252 DPAK... | |
| 600V CoolMOS™ PFD7 superjunction MOSFET in TO-252 DPAK package The 600V CoolMOS™ PFD7 superjunction MOSFET (IPD60R280PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPD60R280PFD7S in a TO-252 DPAK... | |
| 600V CoolMOS™ PFD7 superjunction MOSFET in TO-252 DPAK package The 600V CoolMOS™ PFD7 superjunction MOSFET (IPD60R360PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPD60R360PFD7S in a TO-252 DPAK... | |
| 600V CoolMOS™ PFD7 superjunction MOSFET in TO-252 DPAK package The 600V CoolMOS™ PFD7 superjunction MOSFET (IPD60R600PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPD60R600PFD7S in a TO-252 DPAK... | |
| 650 V CoolMOS™ 8 power transistor The 650 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 650 V CoolMOS™ 7 MOSFET family including C7 and CFD7. It... | |
| 650 V CoolMOS™ CFD7A N-channel automotive SJ power MOSFET in HDSOP-22 top-side cooling The 17mΩ IPDQ65R017CFD7A in QDPAK top side cooling SMD package is part of the automotive-qualified 650 V... | |
| 650 V CoolMOS™ CFD7A N-channel automotive SJ power MOSFET in HDSOP-22 top-side cooling The 29mΩ IPDQ65R029CFD7A in QDPAK top side cooling SMD package is part of the automotive-qualified 650 V... | |
| 650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs. In addition to the well-known attributes of high quality and... | |
| 950 V CoolMOS™ PFD7 superjunction MOSFET in TO-252 DPAK package The 950 V CoolMOS™ PFD7 superjunction MOSFET (IPD95R450PFD7) complements the CoolMOS™ 7 offering for high power lighting and industrial SMPS... | |
| A new benchmark in efficiency and thermal performance 800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance,... | |
| CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss... | |
| Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950 V CoolMOS™ P7 technology focuses on the low-power SMPS market. Offering 50 V more... | |
| Double DPAK (D-DPAK) Innovative top-side cooled SMD solution for high power applications Infineon Technologies introduces Double DPAK (D-DPAK), the first top-side cooled surface mount device (SMD) package addressing high power... | |
| Infineon’s answer for flyback topologies Developed to serve today’s and especially tomorrow’s trends in flyback topologies – the new 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS... | |
| Infineon’s answer to resonant high power topologies The 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ | |
| Infineon’s answer to resonant high power topologies The 600 V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. | |
| Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over... | |
| Infineon’s lowest RDS(on) * A SJ MOSFET in the novel top-side-cooled QDPAK package, ideal for low-frequency switching automotive applications The automotive qualified AEC-Q101, 600 V CoolMOS™ S7A SJ MOSFET... | |
| Infineon's 250V OptiMOS™ products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. Summary... | |
| Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering... | |
| IPD60R180CM8 - 600 V CoolMOS™ 8 power transistor The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7,... | |
| IPD60R600CM8 600 V CoolMOS™ 8 power transistor The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7,... | |
| IPDD60R037CM8 - 600 V CoolMOS™ 8 power transistor The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7,... | |
| IPDD60R180CM8 600 V CoolMOS™ 8 power transistor The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7,... | |
| IPDQ60R007CM8 600 V CoolMOS™ 8 power transistor The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7,... | |
| IPDQ60R016CM8 600 V CoolMOS™ 8 power transistor The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7,... | |
| IPDQ60R037CM8 - 600 V CoolMOS™ 8 power transistor The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7,... | |
| Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the... | |
| OptiMOS™ P-Channel MOSFET 150V in DPAK OptiMOS™ P-channel MOSFETs 150V in DPAK package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main... | |
| P-channel MOSFETs in normal and logic level, reducing design complexity in medium and low power applications OptiMOS™ P-channel MOSFETs 60V in DPAK package represents the new technology targeted for battery... | |
| Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7 650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2... | |
| Summary of Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • | |
| Summary of Features N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Benefits world's lowest RDS... | |
| Summary of Features N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Simulation/SPICE-Mod el Applications EV... | |
| Summary of Features N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra low RDSon Benefits... | |
| Summary of Features N-channel - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Benefits highest current capability 180A... | |
| Summary of Features N-channel - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Benefits low RDS (on) in... | |
| Summary of Features N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Package (RoHS compliant) 100% Avalanche tested Benefits Low switching... | |
| Summary of Features N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) 100% Avalanche tested Benefits highest current... | |
| Summary of Features N-channel - Normal Level - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Simulation/SPICE-Mod el... | |
| Summary of Features N-channel Logic Level - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (lead free) Ultra low Rds(on) 100%... | |
| Summary of Features OptiMOS™ - power MOSFET for automotive applications N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS... | |
| Summary of Features P-channel - Logic Level - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (RoHS compliant) 100% Avalanche tested Benefits No... | |
| Summary of Features P-channel - Logic Level - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (RoHS compliant) 100% Avalanche tested Intended for... | |
| Summary of Features P-channel - Logic Level - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Intended for... | |
| Summary of Features P-channel - Normal Level - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (RoHS compliant) 100% Avalanche tested Benefits No... | |
| The 150 V OptiMOS™ achieves a reduction in RDS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens... | |
| The 600 V CoolMOS™ S7 SJ MOSFET family is optimized for low conduction losses and features the lowest RDS(on) in the market when it comes to high-voltage SJ MOSFETs. | |
| The 600V CoolMOS™ S7 SJ MOSFET family is optimized for low conduction losses and features the lowest RDS(on) in the market when it comes to high-voltage SJ MOSFETs in... | |
| The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPDQ65R017CFD7 in... | |
| The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPDQ65R029CFD7 in... | |
| The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPDQ65R040CFD7 in... |
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