MOSFET N-CH 60V 180A TO263-7 Product overview: IPB017N06N3GATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 180A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 180A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB017N06N3GATMA
Manufacturer: Infineon Technologies
Win Source Part Number: 921246-IPB017N06N3GA
Series: OptiMOS™
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: N-Channel 60 V 180A (Tc) 250W (Tc) Surface Mount PG-TO263-7
Package: TO-263-7, D2Pak (6 Leads + Tab)
Package: Reel - TR
Mounting: Surface Mount
Family Name: IPB017
Categories: Discrete Semiconductor Products
Case / Package: PG-TO263-7
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
Quantity per package: 1000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: SP000434404, IPB017N06N3 G, IPB017N06N3G, IPB017N06N3 GCT, IPB017N06N3 GCT-ND, IPB017N06N3 G-ND, IPB017N06N3GATMA1DKR
N-Channel 60V 180A (Tc) 250W (Tc) Surface Mount PG-TO263-7
N-Channel 60V 180A (Tc) 250W (Tc) Surface Mount PG-TO263-7
N-Channel 60V 180A (Tc) 250W (Tc) Surface Mount PG-TO263-7
Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) TO-263 T/R
MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3
MOSFET N-CH 60V 180A TO263-7
MOSFET N-CH 60V 180A TO263-7
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IPB017N06N3GATMA1 | 921246-IPB017N06N3GATMA1 | IPB017N06N3GATMA1TR-ND | 376-IPB017N06N3GATMA1 | IPB017N06N3GATMA1 | IPB017N06N3GATMA1 | IPB017N06N3GATMA1 |
| Product Name | 60V 180A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB017N06N3GATMA1 | Single FETs, MOSFETs | Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) TO-263 T/R | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | |||||
| V(BR)DSS | 60 volts | 60 volts | |||||
| Transconductance | 0.0990 kS | ||||||
| PD | 250 milliwatts | 250000 milliwatts | 250000 milliwatts |
