Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA60R520CPXKSA1 IPA60R520CPXKSA1

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1045736-IPA60R520CPX KSA1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO-220-FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 6.8A (Tc) Gate-Source Threshold Voltage: 3.5V @ 250μA Max Gate Charge: 31nC @ 10V Max Input Capacitance: 630pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 520 mOhm @ 3.8A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 1045736-IPA60R520CPX KSA1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO-220-FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 6.8A (Tc) Gate-Source Threshold Voltage: 3.5V @ 250μA Max Gate Charge: 31nC @ 10V Max Input Capacitance: 630pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 520 mOhm @ 3.8A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA60R520CPXKSA1 - 1045736-IPA60R520CPXKSA1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA60R520CPXKSA1
1045736-IPA60R520CPXKSA1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA60R520CPXKSA1 1045736-IPA60R520CPXKSA1
Manufacturer: Infineon Technologies Win Source Part Number: 1045736-IPA60R520CPX KSA1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO-220-FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 6.8A (Tc) Gate-Source Threshold Voltage: 3.5V @ 250μA Max Gate Charge: 31nC @ 10V Max Input Capacitance: 630pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 520 mOhm @ 3.8A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 1045736-IPA60R520CPXKSA1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 30W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO-220-FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 6.8A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 250μA
Max Gate Charge: 31nC @ 10V
Max Input Capacitance: 630pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 520 mOhm @ 3.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore
600V 6.8A TO220 MOSFET Transistor
278-IPA60R520CPXKSA1
600V 6.8A TO220 MOSFET Transistor 278-IPA60R520CPXKSA1
MOSFET N-CH 600V 6.8A TO220-FP Product overview: IPA60R520CPXKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 6.8A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 6.8A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPA60R520CPXKSA1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 600V 6.8A TO220-FP Product overview: IPA60R520CPXKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 6.8A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 6.8A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPA60R520CPXKSA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IPA60R520CPXKSA1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPA60R520CPXKSA1-ND
Single FETs, MOSFETs IPA60R520CPXKSA1-ND
N-Channel 600V 6.8A (Tc) 30W (Tc) Through Hole PG-TO220-3-31

N-Channel 600V 6.8A (Tc) 30W (Tc) Through Hole PG-TO220-3-31

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPA60R520CPXKSA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPA60R520CPXKSA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPA60R520CPXKSA1
MOSFET N-CH 600V 6.8A TO220-FP

MOSFET N-CH 600V 6.8A TO220-FP

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1045736-IPA60R520CPXKSA1 278-IPA60R520CPXKSA1 IPA60R520CPXKSA1-ND IPA60R520CPXKSA1
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA60R520CPXKSA1 600V 6.8A TO220 MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 600 volts
PD 30000 milliwatts 30000 milliwatts
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